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Lovejoy, T. C., Yitamben, E. N., Ohta, T., Fain, S. C., Ohuchi, F. S., Olmstead, M. A. (2010) One-dimensional electronic states inGa2Se3on Si(001):As. Physical Review B, 81 (24) doi:10.1103/physrevb.81.245313

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Reference TypeJournal (article/letter/editorial)
TitleOne-dimensional electronic states inGa2Se3on Si(001):As
JournalPhysical Review B
AuthorsLovejoy, T. C.Author
Yitamben, E. N.Author
Ohta, T.Author
Fain, S. C.Author
Ohuchi, F. S.Author
Olmstead, M. A.Author
Year2010 (June 15)Volume81
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.81.245313Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14208145Long-form Identifiermindat:1:5:14208145:9
GUID0
Full ReferenceLovejoy, T. C., Yitamben, E. N., Ohta, T., Fain, S. C., Ohuchi, F. S., Olmstead, M. A. (2010) One-dimensional electronic states inGa2Se3on Si(001):As. Physical Review B, 81 (24) doi:10.1103/physrevb.81.245313
Plain TextLovejoy, T. C., Yitamben, E. N., Ohta, T., Fain, S. C., Ohuchi, F. S., Olmstead, M. A. (2010) One-dimensional electronic states inGa2Se3on Si(001):As. Physical Review B, 81 (24) doi:10.1103/physrevb.81.245313
In(2010, June) Physical Review B Vol. 81 (24) American Physical Society (APS)

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Yitamben, E. N., Lovejoy, T. C., Paul, D. F., Callaghan, J. B., Ohuchi, F. S., Olmstead, M. A. (2009) Surface morphology ofCr:Ga2Se3heteroepitaxy on Si(001) Physical Review B, 80 (7) doi:10.1103/physrevb.80.075314
Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A. (2011) Controlling the growth morphology and phase segregation of Mn-doped Ga2Se3on Si(001) Physical Review B, 83 (15) doi:10.1103/physrevb.83.155312
Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A. (2009) MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001). Applied Physics Letters, 95 (24). 241907pp. doi:10.1063/1.3273858
Yitamben, E. N., Lovejoy, T. C., Pakhomov, A. B., Heald, S. M., Negusse, E., Arena, D., Ohuchi, F. S., Olmstead, M. A. (2011) Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001) Physical Review B, 83 (4) doi:10.1103/physrevb.83.045203
Lovejoy, T. C., Yitamben, E. N., Shamir, N., Morales, J., Villora, E. G., Shimamura, K., Zheng, S., Ohuchi, F. S., Olmstead, M. A. (2009) Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100). Applied Physics Letters, 94 (8). 81906pp. doi:10.1063/1.3086392
Lovejoy, T. C., Chen, Renyu, Yitamben, E. N., Shutthanadan, V., Heald, S. M., Villora, E. G., Shimamura, K., Zheng, S., Dunham, S. T., Ohuchi, F. S., Olmstead, M. A. (2012) Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3. Journal of Applied Physics, 111 (12). 123716pp. doi:10.1063/1.4729289
Adams, J. A., Bostwick, A., Ohta, T., Ohuchi, Fumio S., Olmstead, Marjorie A. (2005) Heterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe. Physical Review B, 71 (19) doi:10.1103/physrevb.71.195308
Ohta, Taisuke, Schmidt, D. A., Meng, Shuang, Klust, A., Bostwick, A., Yu, Q., Olmstead, Marjorie A., Ohuchi, F. S. (2005) Intrinsic Vacancy-Induced Nanoscale Wire Structure in HeteroepitaxialGa2Se3/Si(001). Physical Review Letters, 94 (11). doi:10.1103/physrevlett.94.116102
Toriyama, T., Watanabe, M., Konishi, T., Ohta, Y. (2011) Quasi-one-dimensional electronic structure of hollandite ruthenateK2Ru8O16. Physical Review B, 83 (19) doi:10.1103/physrevb.83.195101
Lovejoy, T. C., Chen, Renyu, Zheng, X., Villora, E. G., Shimamura, K., Yoshikawa, H., Yamashita, Y., Ueda, S., Kobayashi, K., Dunham, S. T., Ohuchi, F. S., Olmstead, M. A. (2012) Band bending and surface defects in β-Ga2O3. Applied Physics Letters, 100 (18). 181602pp. doi:10.1063/1.4711014
Shimomura, M., Ichikawa, D., Fukuda, Y., Abukawa, T., Aoyama, T., Kono, S. (2005) Formation of one-dimensional molecular chains on a solid surface:Pyrazine∕Si(001) Physical Review B, 72 (3) doi:10.1103/physrevb.72.033303
 
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