Reference Type | Journal (article/letter/editorial) |
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Title | Controlling doping in graphene through a SiC substrate: A first-principles study |
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Journal | Physical Review B |
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Authors | Huang, Bing | Author |
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Xiang, H. J. | Author |
Wei, Su-Huai | Author |
Year | 2011 (April 18) | Volume | 83 |
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Issue | 16 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevb.83.161405Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14213051 | Long-form Identifier | mindat:1:5:14213051:5 |
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GUID | 0 |
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Full Reference | Huang, Bing, Xiang, H. J., Wei, Su-Huai (2011) Controlling doping in graphene through a SiC substrate: A first-principles study. Physical Review B, 83 (16) doi:10.1103/physrevb.83.161405 |
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Plain Text | Huang, Bing, Xiang, H. J., Wei, Su-Huai (2011) Controlling doping in graphene through a SiC substrate: A first-principles study. Physical Review B, 83 (16) doi:10.1103/physrevb.83.161405 |
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In | (2011, April) Physical Review B Vol. 83 (16) American Physical Society (APS) |
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