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Huang, Bing, Xiang, H. J., Wei, Su-Huai (2011) Controlling doping in graphene through a SiC substrate: A first-principles study. Physical Review B, 83 (16) doi:10.1103/physrevb.83.161405

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Reference TypeJournal (article/letter/editorial)
TitleControlling doping in graphene through a SiC substrate: A first-principles study
JournalPhysical Review B
AuthorsHuang, BingAuthor
Xiang, H. J.Author
Wei, Su-HuaiAuthor
Year2011 (April 18)Volume83
Issue16
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.83.161405Search in ResearchGate
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Mindat Ref. ID14213051Long-form Identifiermindat:1:5:14213051:5
GUID0
Full ReferenceHuang, Bing, Xiang, H. J., Wei, Su-Huai (2011) Controlling doping in graphene through a SiC substrate: A first-principles study. Physical Review B, 83 (16) doi:10.1103/physrevb.83.161405
Plain TextHuang, Bing, Xiang, H. J., Wei, Su-Huai (2011) Controlling doping in graphene through a SiC substrate: A first-principles study. Physical Review B, 83 (16) doi:10.1103/physrevb.83.161405
In(2011, April) Physical Review B Vol. 83 (16) American Physical Society (APS)


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