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Reshchikov, M. A., McNamara, J. D., Usikov, A., Helava, H., Makarov, Yu. (2016) Optically generated giant traps in high-purity GaN. Physical Review B, 93 (8) doi:10.1103/physrevb.93.081202

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Reference TypeJournal (article/letter/editorial)
TitleOptically generated giant traps in high-purity GaN
JournalPhysical Review B
AuthorsReshchikov, M. A.Author
McNamara, J. D.Author
Usikov, A.Author
Helava, H.Author
Makarov, Yu.Author
Year2016 (February 2)Volume93
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.93.081202Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14241916Long-form Identifiermindat:1:5:14241916:0
GUID0
Full ReferenceReshchikov, M. A., McNamara, J. D., Usikov, A., Helava, H., Makarov, Yu. (2016) Optically generated giant traps in high-purity GaN. Physical Review B, 93 (8) doi:10.1103/physrevb.93.081202
Plain TextReshchikov, M. A., McNamara, J. D., Usikov, A., Helava, H., Makarov, Yu. (2016) Optically generated giant traps in high-purity GaN. Physical Review B, 93 (8) doi:10.1103/physrevb.93.081202
In(2016, February) Physical Review B Vol. 93 (8) American Physical Society (APS)

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Reshchikov, M. A., McNamara, J. D., Zhang, F., Monavarian, M., Usikov, A., Helava, H., Makarov, Yu., Morkoç, H. (2016) Zero-phonon line and fine structure of the yellow luminescence band in GaN. Physical Review B, 94 (3) doi:10.1103/physrevb.94.035201
Reshchikov, M. A., Sayeed, R. M., Özgür, Ü., Demchenko, D. O., McNamara, J. D., Prozheeva, V., Tuomisto, F., Helava, H., Usikov, A., Makarov, Yu. (2019) Unusual properties of the RY3 center in GaN. Physical Review B, 100 (4) doi:10.1103/physrevb.100.045204
Reshchikov, M. A., McNamara, J. D., Helava, H., Usikov, A., Makarov, Yu. (2018) Two yellow luminescence bands in undoped GaN. Scientific Reports, 8. doi:10.1038/s41598-018-26354-z
Reshchikov, M. A., Demchenko, D. O., Usikov, A., Helava, H., Makarov, Yu. (2014) Carbon defects as sources of the green and yellow luminescence bands in undoped GaN. Physical Review B, 90 (23) doi:10.1103/physrevb.90.235203
Reshchikov, M. A., McNamara, J. D., Toporkov, M., Avrutin, V., Morkoç, H., Usikov, A., Helava, H., Makarov, Yu. (2016) Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence. Scientific Reports, 6. doi:10.1038/srep37511
Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu. (2014) Fine structure of the red luminescence band in undoped GaN. Applied Physics Letters, 104 (3). 32103pp. doi:10.1063/1.4862790
Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Prozheeva, V., Makkonen, I., Tuomisto, F., Leach, J. H., Udwary, K. (2017) Evaluation of the concentration of point defects in GaN. Scientific Reports, 7. doi:10.1038/s41598-017-08570-1
Reshchikov, M. A., Vorobiov, M., Andrieiev, O., Ding, K., Izyumskaya, N., Avrutin, V., Usikov, A., Helava, H., Makarov, Yu. (2020) Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry. Scientific Reports, 10. doi:10.1038/s41598-020-59033-z
Reshchikov, M. A., Demchenko, D. O., McNamara, J. D., Fernández-Garrido, S., Calarco, R. (2014) Green luminescence in Mg-doped GaN. Physical Review B, 90 (3) doi:10.1103/physrevb.90.035207
Usikov, A. S., Helava, H., Nikiforov, A., Puzyk, M. V., Papchenko, B. P., Kovaleva, Yu. V., Makarov, Yu. N. (2016) Electrochemical etching of p–n-GaN/AlGaN photoelectrodes. Technical Physics Letters, 42. 482-485 doi:10.1134/s1063785016050151
Reshchikov, M. A., McNamara, J. D., Fernández-Garrido, S., Calarco, R. (2013) Tunable thermal quenching of photoluminescence in Mg-dopedp-type GaN. Physical Review B, 87 (11) doi:10.1103/physrevb.87.115205
 
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