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OSBURN, C. M., ORMOND, D. W. (1974) ChemInform Abstract: THE EFFECT OF SILICON WAFER IMPERFECTIONS ON MINORITY CARRIER GENERATION AND DIELECTRIC BREAKDOWN IN MOS STRUCTURES. Chemischer Informationsdienst, 5 (48) doi:10.1002/chin.197448040

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: THE EFFECT OF SILICON WAFER IMPERFECTIONS ON MINORITY CARRIER GENERATION AND DIELECTRIC BREAKDOWN IN MOS STRUCTURES
JournalChemischer Informationsdienst
AuthorsOSBURN, C. M.Author
ORMOND, D. W.Author
Year1974 (December 3)Volume5
Issue48
PublisherWiley
DOIdoi:10.1002/chin.197448040Search in ResearchGate
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Mindat Ref. ID14701023Long-form Identifiermindat:1:5:14701023:2
GUID0
Full ReferenceOSBURN, C. M., ORMOND, D. W. (1974) ChemInform Abstract: THE EFFECT OF SILICON WAFER IMPERFECTIONS ON MINORITY CARRIER GENERATION AND DIELECTRIC BREAKDOWN IN MOS STRUCTURES. Chemischer Informationsdienst, 5 (48) doi:10.1002/chin.197448040
Plain TextOSBURN, C. M., ORMOND, D. W. (1974) ChemInform Abstract: THE EFFECT OF SILICON WAFER IMPERFECTIONS ON MINORITY CARRIER GENERATION AND DIELECTRIC BREAKDOWN IN MOS STRUCTURES. Chemischer Informationsdienst, 5 (48) doi:10.1002/chin.197448040
In(1974, December) Chemischer Informationsdienst Vol. 5 (48) Wiley

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Osburn, C. M., Ormond, D. W. (1974) The Effect of Silicon Wafer Imperfections on Minority Carrier Generation and Dielectric Breakdown in MOS Structures. Journal of the Electrochemical Society, 121. 1229pp. doi:10.1149/1.2402020
YOUNG, D. R., OSBURN, C. M. (1974) ChemInform Abstract: MINORITY CARRIER GENERATION STUDIES IN MOS CAPACITORS ON N-TYPE SILICON. Chemischer Informationsdienst, 5 (5) doi:10.1002/chin.197405019
OSBURN, C. M., ORMOND, D. W. (1974) ChemInform Abstract: SODIUM-INDUCED BARRIER-HEIGHT LOWERING AND DIELECTRIC BREAKDOWN ON SIO2 FILMS ON SILICON. Chemischer Informationsdienst, 5 (48) doi:10.1002/chin.197448036
OSBURN, C. M. (1974) ChemInform Abstract: DIELECTRIC BREAKDOWN PROPERTIES OF SIO2 FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS. Chemischer Informationsdienst, 5 (39) doi:10.1002/chin.197439029
OSBURN, C. M., RAIDER, S. I. (1973) ChemInform Abstract: THE EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON. Chemischer Informationsdienst, 4 (51) doi:10.1002/chin.197351020
OSBURN, C. M., CHOU, N. J. (1973) ChemInform Abstract: ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS. Chemischer Informationsdienst, 4 (51) doi:10.1002/chin.197351021
Osburn, C. M., Ormond, D. W. (1972) Dielectric Breakdown in Silicon Dioxide Films on Silicon. Journal of the Electrochemical Society, 119. 591pp. doi:10.1149/1.2404268
Osburn, C. M., Ormond, D. W. (1972) Dielectric Breakdown in Silicon Dioxide Films on Silicon. Journal of the Electrochemical Society, 119. 597pp. doi:10.1149/1.2404269
Osburn, C. M., Ormond, D. W. (1974) Sodium-Induced Barrier-Height Lowering and Dielectric Breakdown on SiO[sub 2] Films on Silicon. Journal of the Electrochemical Society, 121. 1195pp. doi:10.1149/1.2402011
Zechnall, W. (1974) Discussion of “Minority Carrier Generation Studies in MOS Capacitors on N-Type Silicon” [D. R. Young and C. M. Osburn (pp. 1578–1581, Vol. 120, No. 11)]. Journal of the Electrochemical Society, 121. 849pp. doi:10.1149/1.2401934
Young, D. R., Osburn, M. (1973) Minority Carrier Generation Studies in MOS Capacitors on N-Type Silicon. Journal of the Electrochemical Society, 120. 1578pp. doi:10.1149/1.2403307
 
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