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SUMNER, B. E., FOLEY, R. T. (1979) ChemInform Abstract: LIQUID-PHASE EPITAXIAL GROWTH OF GALLIUM-DOPED SILICON. Chemischer Informationsdienst, 10 (7) doi:10.1002/chin.197907006

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: LIQUID-PHASE EPITAXIAL GROWTH OF GALLIUM-DOPED SILICON
JournalChemischer Informationsdienst
AuthorsSUMNER, B. E.Author
FOLEY, R. T.Author
Year1979 (February 13)Volume10
Issue7
PublisherWiley
DOIdoi:10.1002/chin.197907006Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14804597Long-form Identifiermindat:1:5:14804597:4
GUID0
Full ReferenceSUMNER, B. E., FOLEY, R. T. (1979) ChemInform Abstract: LIQUID-PHASE EPITAXIAL GROWTH OF GALLIUM-DOPED SILICON. Chemischer Informationsdienst, 10 (7) doi:10.1002/chin.197907006
Plain TextSUMNER, B. E., FOLEY, R. T. (1979) ChemInform Abstract: LIQUID-PHASE EPITAXIAL GROWTH OF GALLIUM-DOPED SILICON. Chemischer Informationsdienst, 10 (7) doi:10.1002/chin.197907006
In(1979, February) Chemischer Informationsdienst Vol. 10 (7) Wiley

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SANKARAN, R. (1979) ChemInform Abstract: VAPOR PHASE EPITAXIAL GROWTH OF TIN-DOPED GALLIUM ARSENIDE. Chemischer Informationsdienst, 10 (36) doi:10.1002/chin.197936004
Sumner, B. E. (1978) Liquid-Phase Epitaxial Growth of Gallium-Doped Silicon. Journal of the Electrochemical Society, 125. 1817pp. doi:10.1149/1.2131303
BALIGA, B. J. (1980) ChemInform Abstract: LIQUID PHASE EPITAXIAL SILICON DIODES: N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATES. Chemischer Informationsdienst, 11 (35) doi:10.1002/chin.198035008
OTSUBO, M., MIKI, H. (1977) ChemInform Abstract: LIQUID PHASE EPITAXIAL GROWTH OF SEMI-INSULATING GALLIUM ARSENIDE CRYSTALS. Chemischer Informationsdienst, 8 (24) doi:10.1002/chin.197724005
BALIGA, B. J. (1979) ChemInform Abstract: DEEP PLANAR GALLIUM AND ALUMINUM DIFFUSION IN SILICON. Chemischer Informationsdienst, 10 (21) doi:10.1002/chin.197921004
CHANDRA, A., EASTMAN, L. F. (1980) ChemInform Abstract: THE LIQUID PHASE EPITAXIAL GROWTH OF HIGH PURITY GA1-XALXAS (GALLIUM ALUMINUM ARSENIDE) Chemischer Informationsdienst, 11 (19) doi:10.1002/chin.198019014
DAVIS, G. A., WOLFE, C. M. (1983) ChemInform Abstract: LIQUID PHASE EPITAXIAL GROWTH OF ZINC TIN PHOSPHIDE (ZNSNP2) ON GALLIUM ARSENIDE. Chemischer Informationsdienst, 14 (40) doi:10.1002/chin.198340002
YANG, X. F., HUANG, L., GATOS, H. C. (1982) ChemInform Abstract: SELECTIVE EPITAXIAL GROWTH OF GALLIUM ARSENIDE BY LIQUID PHASE ELECTROEPITAXY. Chemischer Informationsdienst, 13 (19) doi:10.1002/chin.198219368
CHENG, K. Y., PEARSON, G. L. (1977) ChemInform Abstract: THE ALUMINUM-GALLIUM-ANTIMONY TERNARY PHASE DIAGRAM AND ITS APPLICATION TO LIQUID PHASE EPITAXIAL GROWTH. Chemischer Informationsdienst, 8 (36) doi:10.1002/chin.197736020
ANDREWS, J. E., STADELMAIER, H. H., LITTLEJOHN, M. A., COMAS, J. (1981) ChemInform Abstract: VAPOR PHASE EPITAXIAL GROWTH OF ZINC SILICON ARSENIDE (ZNSIAS2) ON GERMANIUM AND GALLIUM ARSENIDE SUBSTRATES. Chemischer Informationsdienst, 12 (42) doi:10.1002/chin.198142010
STRINGFELLOW, G. B., HALL, H. T. JUN. (1976) ChemInform Abstract: EFFECT OF III V RATIO ON THE PROPERTIES OF VAPOR PHASE EPITAXIAL GALLIUM PHOSPHIDE. Chemischer Informationsdienst, 7 (40) doi:10.1002/chin.197640006
 
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