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MORKOC, H., DRUMMOND, T. J., KOPP, W., FISCHER, R. (1982) ChemInform Abstract: INFLUENCE OF SUBSTRATE TEMPERATURE ON THE MORPHOLOGY OF ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY. Chemischer Informationsdienst, 13 (30) doi:10.1002/chin.198230010

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: INFLUENCE OF SUBSTRATE TEMPERATURE ON THE MORPHOLOGY OF ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY
JournalChemischer Informationsdienst
AuthorsMORKOC, H.Author
DRUMMOND, T. J.Author
KOPP, W.Author
FISCHER, R.Author
Year1982 (July 27)Volume13
Issue30
PublisherWiley
DOIdoi:10.1002/chin.198230010Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14852043Long-form Identifiermindat:1:5:14852043:3
GUID0
Full ReferenceMORKOC, H., DRUMMOND, T. J., KOPP, W., FISCHER, R. (1982) ChemInform Abstract: INFLUENCE OF SUBSTRATE TEMPERATURE ON THE MORPHOLOGY OF ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY. Chemischer Informationsdienst, 13 (30) doi:10.1002/chin.198230010
Plain TextMORKOC, H., DRUMMOND, T. J., KOPP, W., FISCHER, R. (1982) ChemInform Abstract: INFLUENCE OF SUBSTRATE TEMPERATURE ON THE MORPHOLOGY OF ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY. Chemischer Informationsdienst, 13 (30) doi:10.1002/chin.198230010
In(1982, July) Chemischer Informationsdienst Vol. 13 (30) Wiley

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Drummond, T. J., Fischer, R., Morkoç, H., Miller, P. (1982) Influence of substrate temperature on the mobility of modulation‐doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 40 (5). 430-432 doi:10.1063/1.93096
NOMURA, Y., MANNOH, M., MIHARA, M., NARITSUKA, S., YAMANAKA, K., YUASA, T., ISHII, M. (1985) ChemInform Abstract: EFFECT OF GROUP V/III FLUX RATIO ON LIGHTLY SILICON-DOPED ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY. Chemischer Informationsdienst, 16 (12) doi:10.1002/chin.198512004
KODAMA, M., HASEGAWA, J., KIMATA, M. (1985) ChemInform Abstract: INFLUENCE OF SUBSTRATE PREPARATION ON THE MORPHOLOGY OF GALLIUM ANTIMONIDE FILMS GROWN BY MOLECULAR BEAM EPITAXY. Chemischer Informationsdienst, 16 (37) doi:10.1002/chin.198537002
PLOOG, K., FISCHER, A., KUENZEL, H. (1981) ChemInform Abstract: THE USE OF SILICON AND BERYLLIUM IMPURITIES FOR NOVEL PERIODIC DOPING STRUCTURES IN GALLIUM ARSENIDE GROWN BY MOLECULAR BEAM EPITAXY. Chemischer Informationsdienst, 12 (25) doi:10.1002/chin.198125017
Fischer, R., Klem, J., Drummond, T. J., Thorne, R. E., Kopp, W., Morkoç, H., Cho, A. Y. (1983) Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures. Journal of Applied Physics, 54 (5). 2508-2510 doi:10.1063/1.332317
KOMIYA, S., KOTANI, T. (1979) ChemInform Abstract: DIRECT OBSERVATION OF DISLOCATIONS IN GALLIUM ALUMINUM ARSENIDE (GA1-XALXAS)-GALLIUM ARSENIDE GROWN BY THE LPE METHOD. Chemischer Informationsdienst, 10 (13) doi:10.1002/chin.197913002
IJUIN, H., GONDA, S. (1976) ChemInform Abstract: VARIATION OF SOLID COMPOSITION AND THICKNESS DURING LPE GROWTH OF ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) Chemischer Informationsdienst, 7 (43) doi:10.1002/chin.197643002
MORKOC, HADIS, EASTMAN, L. F. (1976) ChemInform Abstract: THE GROWTH OF UNIFORM SUBMICRON GALLIUM ARSENIDE LAYERS BY LIQUID PHASE EPITAXY. Chemischer Informationsdienst, 7 (39) doi:10.1002/chin.197639001
ISHII, T., JEPPSSON, B. (1978) ChemInform Abstract: INFLUENCE OF TEMPERATURE ON ANODICALLY GROWN NATIVE OXIDES ON GALLIUM ARSENIDE. Chemischer Informationsdienst, 9 (14) doi:10.1002/chin.197814020
Drummond, T. J., Kopp, W., Thorne, R. E., Fischer, R., Morkoç, H. (1982) Influence of AlxGa1−xAs buffer layers on the performance of modulation‐doped field‐effect transistors. Applied Physics Letters, 40 (10). 879-881 doi:10.1063/1.92933
MILLER, B. I., MCFEE, J. H. (1978) ChemInform Abstract: GROWTH OF GALLIUM INDIUM ARSENIDE (GAYIN1-YAS)/INDIUM PHOSPHIDE (INP) HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY. Chemischer Informationsdienst, 9 (51) doi:10.1002/chin.197851006
 
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