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KITAHARA, K., NAKAI, K., SHIBATOMI, S. (1982) ChemInform Abstract: ONE-DIMENSIONAL PHOTOLUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GALLIUM ARSENIDE GROWN BY CZ AND HB METHODS. Chemischer Informationsdienst, 13 (30) doi:10.1002/chin.198230015

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: ONE-DIMENSIONAL PHOTOLUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GALLIUM ARSENIDE GROWN BY CZ AND HB METHODS
JournalChemischer Informationsdienst
AuthorsKITAHARA, K.Author
NAKAI, K.Author
SHIBATOMI, S.Author
Year1982 (July 27)Volume13
Issue30
PublisherWiley
DOIdoi:10.1002/chin.198230015Search in ResearchGate
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Mindat Ref. ID14852048Long-form Identifiermindat:1:5:14852048:8
GUID0
Full ReferenceKITAHARA, K., NAKAI, K., SHIBATOMI, S. (1982) ChemInform Abstract: ONE-DIMENSIONAL PHOTOLUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GALLIUM ARSENIDE GROWN BY CZ AND HB METHODS. Chemischer Informationsdienst, 13 (30) doi:10.1002/chin.198230015
Plain TextKITAHARA, K., NAKAI, K., SHIBATOMI, S. (1982) ChemInform Abstract: ONE-DIMENSIONAL PHOTOLUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GALLIUM ARSENIDE GROWN BY CZ AND HB METHODS. Chemischer Informationsdienst, 13 (30) doi:10.1002/chin.198230015
In(1982, July) Chemischer Informationsdienst Vol. 13 (30) Wiley

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Kitahara, K. (1982) One-Dimensional Photoluminescence Distribution in Semi-Insulating GaAs Grown by CZ and HB Methods. Journal of the Electrochemical Society, 129. 880pp. doi:10.1149/1.2123992
NAKAI, K., KITAHARA, K., SHIBATOMI, A., OHKAWA, S. (1978) ChemInform Abstract: GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GALLIUM ARSENIDE FIELD EFFECT TRANSISTORS. Chemischer Informationsdienst, 9 (6) doi:10.1002/chin.197806003
NAGATA, K., KOMIYA, S., SHIBATOMI, A., OHKAWA, S. (1982) ChemInform Abstract: A NEW ANODIC ETCH FOR THE OBSERVATION OF DISLOCATIONS IN N-GALLIUM ARSENIDE. Chemischer Informationsdienst, 13 (4) doi:10.1002/chin.198204008
BHATTACHARYA, P. K., RHEE, J. K. (1984) ChemInform Abstract: SOME PROPERTIES OF SEMI-INSULATING AND SILICON-IMPLANTED GALLIUM ARSENIDE. Chemischer Informationsdienst, 15 (35) doi:10.1002/chin.198435009
MASU, K., NAKATSUKA, S., KONAGAI, M., TAKAHASHI, K. (1982) ChemInform Abstract: THE ROLE OF BERYLLIUM IN GALLIUM ALUMINUM ARSENIDE/GALLIUM ARSENIDE SOLAR CELLS. Chemischer Informationsdienst, 13 (45) doi:10.1002/chin.198245355
KOMIYA, S., KOTANI, T. (1979) ChemInform Abstract: DIRECT OBSERVATION OF DISLOCATIONS IN GALLIUM ALUMINUM ARSENIDE (GA1-XALXAS)-GALLIUM ARSENIDE GROWN BY THE LPE METHOD. Chemischer Informationsdienst, 10 (13) doi:10.1002/chin.197913002
OTSUBO, M., MIKI, H. (1977) ChemInform Abstract: LIQUID PHASE EPITAXIAL GROWTH OF SEMI-INSULATING GALLIUM ARSENIDE CRYSTALS. Chemischer Informationsdienst, 8 (24) doi:10.1002/chin.197724005
Kitahara, K., Nakai, K., Shibatomi, A., Ohkawa, S. (1979) Electrical and photoelectronic properties of Cr-doped semi-insulating GaAs. Journal of Applied Physics, 50 (8). 5339pp. doi:10.1063/1.326632
ADACHI, S., OE, K. (1984) ChemInform Abstract: CHEMICAL ETCHING CHARACTERISTICS OF (001)GALLIUM ARSENIDE. Chemischer Informationsdienst, 15 (13) doi:10.1002/chin.198413010
Kitahara, K., Nakai, K., Shibatomi, A., Ohkawa, S. (1978) Current‐voltage characteristics and deep levels in chromium‐doped semi‐insulating GaAs. Applied Physics Letters, 32 (4). 259-260 doi:10.1063/1.90012
HOUNG, Y. M., PEARSON, G. L., MATTES, B. L. (1979) ChemInform Abstract: GROWTH OF SEMI-INSULATING LPE GALLIUM ARSENIDE FOR FET BUFFER LAYERS. Chemischer Informationsdienst, 10 (13) doi:10.1002/chin.197913019
 
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