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Arthur, J B, Bardsley, W, Gibson, A F, Hogarth, C A (1955) On the Measurement of Minority Carrier Lifetime in n-Type Silicon. Proceedings of the Physical Society. Section B, 68 (3) 121-129 doi:10.1088/0370-1301/68/3/301

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Reference TypeJournal (article/letter/editorial)
TitleOn the Measurement of Minority Carrier Lifetime in n-Type Silicon
JournalProceedings of the Physical Society. Section B
AuthorsArthur, J BAuthor
Bardsley, WAuthor
Gibson, A FAuthor
Hogarth, C AAuthor
Year1955 (March 1)Volume68
Issue3
PublisherIOP Publishing
DOIdoi:10.1088/0370-1301/68/3/301
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Mindat Ref. ID14972092Long-form Identifiermindat:1:5:14972092:4
GUID0
Full ReferenceArthur, J B, Bardsley, W, Gibson, A F, Hogarth, C A (1955) On the Measurement of Minority Carrier Lifetime in n-Type Silicon. Proceedings of the Physical Society. Section B, 68 (3) 121-129 doi:10.1088/0370-1301/68/3/301
Plain TextArthur, J B, Bardsley, W, Gibson, A F, Hogarth, C A (1955) On the Measurement of Minority Carrier Lifetime in n-Type Silicon. Proceedings of the Physical Society. Section B, 68 (3) 121-129 doi:10.1088/0370-1301/68/3/301
In(1955, March) Proceedings of the Physical Society. Section B Vol. 68 (3) IOP Publishing


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