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Ogawa, Takuzō (1966) Influence of Metal Impurities on Breakdown Characteristics of High Voltage Siliconn+pJunctions. Japanese Journal of Applied Physics, 5 (2) 145-152 doi:10.1143/jjap.5.145

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Metal Impurities on Breakdown Characteristics of High Voltage Siliconn+pJunctions
JournalJapanese Journal of Applied Physics
AuthorsOgawa, TakuzōAuthor
Year1966 (February)Volume5
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.145Search in ResearchGate
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Mindat Ref. ID14976472Long-form Identifiermindat:1:5:14976472:0
GUID0
Full ReferenceOgawa, Takuzō (1966) Influence of Metal Impurities on Breakdown Characteristics of High Voltage Siliconn+pJunctions. Japanese Journal of Applied Physics, 5 (2) 145-152 doi:10.1143/jjap.5.145
Plain TextOgawa, Takuzō (1966) Influence of Metal Impurities on Breakdown Characteristics of High Voltage Siliconn+pJunctions. Japanese Journal of Applied Physics, 5 (2) 145-152 doi:10.1143/jjap.5.145
In(1966, February) Japanese Journal of Applied Physics Vol. 5 (2) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Ogawa, Takuzō (1965) Avalanche Breakdown and Multiplication in SiliconpinJunctions. Japanese Journal of Applied Physics, 4 (7) 473-484 doi:10.1143/jjap.4.473
Matsumoto, Kazushige, Haneta, Yuichi (1974) Effect of Thin Oxide Film on Breakdown Voltage of SiliconN+PJunction. Japanese Journal of Applied Physics, 13 (2) 367-368 doi:10.1143/jjap.13.367
Ogawa, Takuzō, Yatsuo, Tsutomu, Kamei, Tatsuya, Morita, Keiichi (1970) On Determination of Gold Trap Concentration in Diffused SiliconpnJunctions. Japanese Journal of Applied Physics, 9 (4) 427 doi:10.1143/jjap.9.427a
Ogawa, Takuzō, Yatsuo, Tsutomu, Kamei, Tatsuya, Morita, Keiichi (1970) On Determination of Gold Trap Concentration in Diffused SiliconpnJunctions. Japanese Journal of Applied Physics, 9 (1) 81-89 doi:10.1143/jjap.9.81
Kushida, Keiko, Takeuchi, Hiroshi (1985) Current-Voltage Characteristics Including Breakdown Voltage for Au/ZnO/Au/Fused Quartz Structure. Japanese Journal of Applied Physics, 24. 630-631 doi:10.1143/jjap.24.630
Howling, D. H. (1966) Positive Ion Contamination on Metal Surfaces. Japanese Journal of Applied Physics, 5 (2) 170-176 doi:10.1143/jjap.5.170
Nakayama, Hiroshi, Onoda, Mitsuyoshi, Kuroda, Shigeji, Amakawa, Kiyoshi (1988) Breakdown Characteristics of SF6-N2Mixture in High Nonuniform Field Gap under Pulse Voltage. Japanese Journal of Applied Physics, 27. 1782-1783 doi:10.1143/jjap.27.1782
Choi, Woo Young (2009) Effect of Device Parameters on the Breakdown Voltage of Impact-Ionization Metal–Oxide–Semiconductor Devices. Japanese Journal of Applied Physics, 48 (4) 40203 doi:10.1143/jjap.48.040203
Kanashima, Takeshi, Okuyama, Masanori (1999) Analyses of High Frequency Capacitance–Voltage Characteristics of Metal-Ferroelectrics-Insulator-Silicon Structure. Japanese Journal of Applied Physics, 38. 2044-2048 doi:10.1143/jjap.38.2044
Ogawa, Isamu, Noda, Nobuaki, Kawahata, Kazuo, Ogawa, Yuichi, Fujita, Junji (1987) Thermal Characteristics of a Metal-Film Bolometer. Japanese Journal of Applied Physics, 26. 611-617 doi:10.1143/jjap.26.611
Zohta, Yasuhito (1984) Influence of Transmission Resonance on Current-Voltage Characteristics of Semiconductor Diodes including a Quantum Well. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l531
 
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