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Tamura, Hiroshi (1966) Preparation and Electrical Properties of Bi2Te3-Ge Alloys. Japanese Journal of Applied Physics, 5 (7) 593-602 doi:10.1143/jjap.5.593

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Reference TypeJournal (article/letter/editorial)
TitlePreparation and Electrical Properties of Bi2Te3-Ge Alloys
JournalJapanese Journal of Applied Physics
AuthorsTamura, HiroshiAuthor
Year1966 (July)Volume5
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.593Search in ResearchGate
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Mindat Ref. ID14976593Long-form Identifiermindat:1:5:14976593:2
GUID0
Full ReferenceTamura, Hiroshi (1966) Preparation and Electrical Properties of Bi2Te3-Ge Alloys. Japanese Journal of Applied Physics, 5 (7) 593-602 doi:10.1143/jjap.5.593
Plain TextTamura, Hiroshi (1966) Preparation and Electrical Properties of Bi2Te3-Ge Alloys. Japanese Journal of Applied Physics, 5 (7) 593-602 doi:10.1143/jjap.5.593
In(1966, July) Japanese Journal of Applied Physics Vol. 5 (7) Japan Society of Applied Physics

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Kimura, Takeji, Nunoshita, Masahiro, Yamaguchi, Jiro (1966) Electrical and Optical Properties of Ge-Si n-n Heterojunctions. Japanese Journal of Applied Physics, 5 (7) 639-640 doi:10.1143/jjap.5.639b
Tomura, Kouichi, Maekawa, Hiroshi, Yoshizawa, Michio (1975) Thermodynamic Properties of Amorphous Ge-Se Alloys. Japanese Journal of Applied Physics, 14 (12) 2085-2086 doi:10.1143/jjap.14.2085
Nojima, Kenji, Ibuki, Sumiaki (1966) Preparation and Some Properties of ZnSe Diodes. Japanese Journal of Applied Physics, 5 (3) 253 doi:10.1143/jjap.5.253
Shigetomi, Shigeru, Ikari, Tetsuo, Nakashima, Hiroshi (2000) Electrical Properties of p- and n-GaSe Doped with As and Ge. Japanese Journal of Applied Physics, 39. 5083-5084 doi:10.1143/jjap.39.5083
Morisaki, Hiroshi, Inuishi, Yoshio (1966) Hall Mobility and Microwave Emission in InSb Plasma. Japanese Journal of Applied Physics, 5 (7) 637 doi:10.1143/jjap.5.637
Ido, Toshiyuki, Kakehi, Masahiro, Arizumi, Tetsuya (1971) Preparation and Electrical Properties of GaSb-Ge Heterojunctions by Vapor Growth Technique. Japanese Journal of Applied Physics, 10 (10) 1388-1395 doi:10.1143/jjap.10.1388
Tamura, Masao, Shukuri, Shoji, Tachi, Shinichi, Ishitani, Tohru, Tamura, Hifumi (1983) Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l698
Arizumi, Tetsuya, Nishinaga, Tatau (1966) Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process. Japanese Journal of Applied Physics, 5 (1) 21-28 doi:10.1143/jjap.5.21
Tamura, Hifumi, Kimura, Hirokazu (1966) A Plasma Ion Gun with Pierce Electrode. Japanese Journal of Applied Physics, 5 (10) 985-987 doi:10.1143/jjap.5.985
Ikushima, Hiroshi, Hayakawa, Shigeru (1967) Structure and Electrical Properties of Thin Oxide Film Diode with Sputtered Titanium Base. Japanese Journal of Applied Physics, 6 (7) 906-907 doi:10.1143/jjap.6.906
Aizawa, Koji, Ishiwara, Hiroshi (1994) Electrical Properties of FerroelectricBaMgF4Films on Si Substrates. Japanese Journal of Applied Physics, 33. 5178-5181 doi:10.1143/jjap.33.5178
 
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