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Aoki, Hiroyuki (1967) Electrical and X-Ray Investigation of Tin in Gallium Arsenide. Japanese Journal of Applied Physics, 6 (10) 1248 doi:10.1143/jjap.6.1248

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and X-Ray Investigation of Tin in Gallium Arsenide
JournalJapanese Journal of Applied Physics
AuthorsAoki, HiroyukiAuthor
Year1967 (October)Volume6
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.1248Search in ResearchGate
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Mindat Ref. ID14976711Long-form Identifiermindat:1:5:14976711:0
GUID0
Full ReferenceAoki, Hiroyuki (1967) Electrical and X-Ray Investigation of Tin in Gallium Arsenide. Japanese Journal of Applied Physics, 6 (10) 1248 doi:10.1143/jjap.6.1248
Plain TextAoki, Hiroyuki (1967) Electrical and X-Ray Investigation of Tin in Gallium Arsenide. Japanese Journal of Applied Physics, 6 (10) 1248 doi:10.1143/jjap.6.1248
In(1967, October) Japanese Journal of Applied Physics Vol. 6 (10) Japan Society of Applied Physics

See Also

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Furukawa, Yoshitaka, Ishibashi, Yoshio (1967) Vapor Plating of Tin onto Gallium Arsenide. Japanese Journal of Applied Physics, 6 (6) 787-788 doi:10.1143/jjap.6.787
Furukawa, Yoshitaka (1967) Trap Levels in Gallium Arsenide. Japanese Journal of Applied Physics, 6 (6) 675-679 doi:10.1143/jjap.6.675
Nakano, Takao, Oku, Taiji (1967) Temperature Dependence of Recombination Lifetime in Gallium Arsenide Electroluminescent Diodes. Japanese Journal of Applied Physics, 6 (10) 1212-1221 doi:10.1143/jjap.6.1212
Aoki, Tatsuo, Yamaguchi, Masao (1971) AsCl3Flow-Rate Dependence on Properties of Epitaxially Grown Gallium Arsenide. Japanese Journal of Applied Physics, 10 (7) 953 doi:10.1143/jjap.10.953
Furukawa, Yoshitaka (1967) Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride. Japanese Journal of Applied Physics, 6 (11) 1344 doi:10.1143/jjap.6.1344
Shiragfuji, Junji (1967) Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 6 (2) 282 doi:10.1143/jjap.6.282a
Nakano, Takao, Fujikawa, Kyo-ichiro, Oku, Taiji (1967) Improvement of Quantum Efficiency in Gallium Arsenide Electroluminescent Diodes. Japanese Journal of Applied Physics, 6 (6) 665-674 doi:10.1143/jjap.6.665
Fujimoto, Masatomo, Sato, Yasuo, Kudo, Kiyoshi (1967) Diffusion of Zinc in Gallium Arsenide under Arsenic Vapor Pressure. Japanese Journal of Applied Physics, 6 (7) 848-853 doi:10.1143/jjap.6.848
Akita, Kenzo, Iida, Hiroaki, Ryuzan, Osamu (1971) Electrical Properties ofn-Type Gallium Arsenide at High Temperatures. Japanese Journal of Applied Physics, 10 (3) 392-394 doi:10.1143/jjap.10.392
Bhattacharya, Tapan K. (1970) Photocurrent Oscillations in Oxygen-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 9 (10) 1268-1274 doi:10.1143/jjap.9.1268
Miyauchi, Takeshi, Sonomura, Hajimu, Yamamoto, Nobuyuki (1967) Electrical Properties of Gallium Phosphide. Japanese Journal of Applied Physics, 6 (12) 1409-1413 doi:10.1143/jjap.6.1409
 
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