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Tarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo (1967) The Built-in Voltage and the Charge Distributions in the Oxide of MOS Structure. Japanese Journal of Applied Physics, 6 (2) 191-204 doi:10.1143/jjap.6.191

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Reference TypeJournal (article/letter/editorial)
TitleThe Built-in Voltage and the Charge Distributions in the Oxide of MOS Structure
JournalJapanese Journal of Applied Physics
AuthorsTarui, YasuoAuthor
Komiya, YoshioAuthor
Teshima, HirooAuthor
Year1967 (February)Volume6
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.191Search in ResearchGate
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Mindat Ref. ID14976788Long-form Identifiermindat:1:5:14976788:2
GUID0
Full ReferenceTarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo (1967) The Built-in Voltage and the Charge Distributions in the Oxide of MOS Structure. Japanese Journal of Applied Physics, 6 (2) 191-204 doi:10.1143/jjap.6.191
Plain TextTarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo (1967) The Built-in Voltage and the Charge Distributions in the Oxide of MOS Structure. Japanese Journal of Applied Physics, 6 (2) 191-204 doi:10.1143/jjap.6.191
In(1967, February) Japanese Journal of Applied Physics Vol. 6 (2) Japan Society of Applied Physics

See Also

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Tarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo, Nagai, Kiyoko (1966) Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition. Japanese Journal of Applied Physics, 5 (4) 275-288 doi:10.1143/jjap.5.275
Komiya, Yoshio, Tarui, Yasuo (1969) Comparison between the Experimental and Theoretical Sodium Distribution in Silicon Oxide. Japanese Journal of Applied Physics, 8 (2) 272 doi:10.1143/jjap.8.272
Miura, Yoshio, Matukura, Yasuo (1967) Instabilities of MOS Structure. Japanese Journal of Applied Physics, 6 (5) 582-588 doi:10.1143/jjap.6.582
Komiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1981) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l749
Murakami, Koichi, Takahashi, Tetsuo, Koyanagi, Tadamasa, Hoh, Koichiro, Komiya, Yoshio, Tarui, Yasuo (1982) Thermal Analysis and Experimental Evaluation of Melting Threshold Energy of Si Thin Film Structure in Laser Annealing. Japanese Journal of Applied Physics, 21. 879-884 doi:10.1143/jjap.21.879
Miura, Yoshio, Matukura, Yasuo (1966) Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure. Japanese Journal of Applied Physics, 5 (2) 180 doi:10.1143/jjap.5.180
Ohwada, Atsushi (1967) Charge Transport Phenomena in MOS System. Japanese Journal of Applied Physics, 6 (1) 65-70 doi:10.1143/jjap.6.65
Komiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1982) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 21. 441 doi:10.7567/jjaps.21s1.441
Hwu, Jenn-Gwo, Ho, I-Hsiu (1990) Oxide Resistance Characterization in MOS Structures by the Voltage Decay Method. Japanese Journal of Applied Physics, 29. 1243-1247 doi:10.1143/jjap.29.1243
Tsukui, Tetsuya, Oda, Shunri (1995) Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure. Japanese Journal of Applied Physics, 34. 874-877 doi:10.1143/jjap.34.874
Yamagishi, Koji, Tarui, Yasuo (1986) Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic Memories. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l306
 
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