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Seki, Hisashi, Moriyama, Kooichi, Matumoto, Shyungo, Uramoto, Masayoshi (1967) Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2System. Japanese Journal of Applied Physics, 6 (6) 785-786 doi:10.1143/jjap.6.785

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Reference TypeJournal (article/letter/editorial)
TitleThermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2System
JournalJapanese Journal of Applied Physics
AuthorsSeki, HisashiAuthor
Moriyama, KooichiAuthor
Matumoto, ShyungoAuthor
Uramoto, MasayoshiAuthor
Year1967 (June)Volume6
Issue6
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.785Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14976927Long-form Identifiermindat:1:5:14976927:5
GUID0
Full ReferenceSeki, Hisashi, Moriyama, Kooichi, Matumoto, Shyungo, Uramoto, Masayoshi (1967) Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2System. Japanese Journal of Applied Physics, 6 (6) 785-786 doi:10.1143/jjap.6.785
Plain TextSeki, Hisashi, Moriyama, Kooichi, Matumoto, Shyungo, Uramoto, Masayoshi (1967) Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2System. Japanese Journal of Applied Physics, 6 (6) 785-786 doi:10.1143/jjap.6.785
In(1967, June) Japanese Journal of Applied Physics Vol. 6 (6) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Seki, Hisashi, Moriyama, Kooichi (1967) Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2System. Japanese Journal of Applied Physics, 6 (11) 1345-1346 doi:10.1143/jjap.6.1345
Seki, Hisashi, Moriyama, Kooichi, Asakawa, Izumi, Horie, Souji (1968) Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube. Japanese Journal of Applied Physics, 7 (11) 1324-1331 doi:10.1143/jjap.7.1324
Seki, Hisashi, Takeuchi, Susumu, Wakashima, Yoshikazu, Manabe, Toshikatsu (1972) A Note on the Composition of GaAs1-xPxGrown in the GaAs-AsCl3-PCl3-H2System. Japanese Journal of Applied Physics, 11 (7) 1070-1071 doi:10.1143/jjap.11.1070
Koukitu, Akinori, Seki, Hisashi (1977) Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System. Japanese Journal of Applied Physics, 16 (11) 1967-1971 doi:10.1143/jjap.16.1967
Matumoto, Kazuhisa, Yamada, Masayoshi, Hamaguchi, Chihiro, Nakai, Junkichi (1972) Magnetoacoustoelectric Instability in Epitaxial GaAs. Japanese Journal of Applied Physics, 11 (11) 1744 doi:10.1143/jjap.11.1744
Seki, Hisashi, Araki, Hidemaro (1967) Vapor Transport Thermodynamics of GaP-Cl2-H2System in an Open Tube. Japanese Journal of Applied Physics, 6 (12) 1414-1418 doi:10.1143/jjap.6.1414
Seki, Hisashi, Kinoshita, Masayuki (1968) Epitaxial Growth of InP on GaAs in an Open Flow System. Japanese Journal of Applied Physics, 7 (9) 1142-1143 doi:10.1143/jjap.7.1142
Koukitu, Akinori, Kouno, Satoshi, Takashima, Kouichirou, Seki, Hisashi (1984) Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method. Japanese Journal of Applied Physics, 23. 951-955 doi:10.1143/jjap.23.951
Seki, Hisashi, Kookitu, Akinori, Ohta, Katuro, Fujimoto, Masatomo (1976) New Methods of Vapour Phase Epitaxial Growth of GaAs. Japanese Journal of Applied Physics, 15 (1) 11-17 doi:10.1143/jjap.15.11
Koukitu, Akinori, Hasegawa, Fumio, Seki, Hisashi (1988) Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl3and AsH3System. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1594
Seki, Hisashi, Araki, Hidemaro (1965) A Thermodynamical Study of the Growth Rate of Epitaxial Silicon from SiI4. Japanese Journal of Applied Physics, 4 (9) 645-651 doi:10.1143/jjap.4.645
 
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