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Shiraiwa, Toshio, Sakamoto, Yoshiyasu, Fujino, Nobukatsu (1967) Identification of New Manganese-Silicon-Nitride in Steel by Electron Probe Microanalyser. Japanese Journal of Applied Physics, 6 (8) 1025-1026 doi:10.1143/jjap.6.1025

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Reference TypeJournal (article/letter/editorial)
TitleIdentification of New Manganese-Silicon-Nitride in Steel by Electron Probe Microanalyser
JournalJapanese Journal of Applied Physics
AuthorsShiraiwa, ToshioAuthor
Sakamoto, YoshiyasuAuthor
Fujino, NobukatsuAuthor
Year1967 (August)Volume6
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.1025Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14976988Long-form Identifiermindat:1:5:14976988:6
GUID0
Full ReferenceShiraiwa, Toshio, Sakamoto, Yoshiyasu, Fujino, Nobukatsu (1967) Identification of New Manganese-Silicon-Nitride in Steel by Electron Probe Microanalyser. Japanese Journal of Applied Physics, 6 (8) 1025-1026 doi:10.1143/jjap.6.1025
Plain TextShiraiwa, Toshio, Sakamoto, Yoshiyasu, Fujino, Nobukatsu (1967) Identification of New Manganese-Silicon-Nitride in Steel by Electron Probe Microanalyser. Japanese Journal of Applied Physics, 6 (8) 1025-1026 doi:10.1143/jjap.6.1025
In(1967, August) Japanese Journal of Applied Physics Vol. 6 (8) Japan Society of Applied Physics

See Also

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Shiraiwa, Toshio, Fujino, Nobukatsu (1970) Quantitative Electron Probe Microanalysis of Oxygen. Japanese Journal of Applied Physics, 9 (8) 976-982 doi:10.1143/jjap.9.976
Shiraiwa, Toshio, Fujino, Nobukatsu (1971) Quantitative Electron Probe Microanalysis of Oxygen. Japanese Journal of Applied Physics, 10 (7) 963 doi:10.1143/jjap.10.963b
Yamashita, Kenichi, Kitagawa, Kunihiko, Aoki, Toshihiko, Kajita, Eiji, Fujino, Nobukatsu, Shiraiwa, Toshio (1991) A Model of Thermal Transfer in Czochralski Silicon Molten. Japanese Journal of Applied Physics, 30. 3465-3470 doi:10.1143/jjap.30.3465
Sadamitsu, Shinsuke, Sumita, Shigeo, Fujino, Nobukatsu, Shiraiwa, Toshio (1988) TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1819
Shiraiwa, Toshio, Fujino, Nobukatsu (1966) Theoretical Calculation of Fluorescent X-Ray Intensities in Fluorescent X-Ray Spectrochemical Analysis. Japanese Journal of Applied Physics, 5 (10) 886-899 doi:10.1143/jjap.5.886
Hourai, Masataka, Naridomi, Toshio, Oka, Yasunori, Murakami, Katsumi, Sumita, Shigeo, Fujino, Nobukatsu, Shiraiwa, Toshio (1988) A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2361
Sano, Masakazu, Horai, Masataka, Miyazaki, Morimasa, Fujino, Nobukatsu, Shiraiwa, Toshio (1988) Comparison of Gettering Techniques by Means of Intentional Quantitative Cu Contamination. Japanese Journal of Applied Physics, 27. 1220-1223 doi:10.1143/jjap.27.1220
Hourai, Masataka, Murakami, Katsumi, Shigematsu, Tatsuhiko, Fujino, Nobukatsu, Shiraiwa, Toshio (1989) Behavior of Defects Induced by Metallic Impurities on Si(100) Surfaces. Japanese Journal of Applied Physics, 28. 2413-2420 doi:10.1143/jjap.28.2413
Miyazaki, Morimasa, Sano, Masakazu, Sadamitsu, Shinsuke, Sumita, Shigeo, Fujino, Nobukatsu, Shiraiwa, Toshio (1989) Dependence of Gettering Efficiency on Metal Impurities. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l519
Sadamitsu, Shinsuke, Sano, Masakazu, Hourai, Masataka, Sumita, Shigeo, Fujino, Nobukatsu, Shiraiwa, Toshio (1989) TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l333
Yamazaki, Syunpei, Kato, Yogoro, Taniguchi, Ichirou (1967) Silicon Nitride by Using Stain Films on Silicon. Japanese Journal of Applied Physics, 6 (3) 408 doi:10.1143/jjap.6.408
 
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