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Makimoto, Tsugio, Sugawara, Katsuro, Maki, Michiyoshi (1970) Self-Isolated Transistor Structures of Bipolar Integrated Circuits. Japanese Journal of Applied Physics, 9 (7) 782-792 doi:10.1143/jjap.9.782

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Reference TypeJournal (article/letter/editorial)
TitleSelf-Isolated Transistor Structures of Bipolar Integrated Circuits
JournalJapanese Journal of Applied Physics
AuthorsMakimoto, TsugioAuthor
Sugawara, KatsuroAuthor
Maki, MichiyoshiAuthor
Year1970 (July)Volume9
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.782Search in ResearchGate
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Mindat Ref. ID14978031Long-form Identifiermindat:1:5:14978031:7
GUID0
Full ReferenceMakimoto, Tsugio, Sugawara, Katsuro, Maki, Michiyoshi (1970) Self-Isolated Transistor Structures of Bipolar Integrated Circuits. Japanese Journal of Applied Physics, 9 (7) 782-792 doi:10.1143/jjap.9.782
Plain TextMakimoto, Tsugio, Sugawara, Katsuro, Maki, Michiyoshi (1970) Self-Isolated Transistor Structures of Bipolar Integrated Circuits. Japanese Journal of Applied Physics, 9 (7) 782-792 doi:10.1143/jjap.9.782
In(1970, July) Japanese Journal of Applied Physics Vol. 9 (7) Japan Society of Applied Physics

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Nagai, Tsutomu, Naka, Shigeki, Okada, Hiroyuki, Onnagawa, Hiroyoshi (2007) Organic Field-Effect Transistor Integrated Circuits using Self-Alignment Process Technology. Japanese Journal of Applied Physics, 46 (4) 2666-2668 doi:10.1143/jjap.46.2666
Kuroda, Ekyo, Matsuda, Masatoshi, Maki, Michiyoshi (1981) Causes of Thickness Non-Uniformity in Silicon Ribbon Crystals. Japanese Journal of Applied Physics, 20 (7) 1211-1218 doi:10.1143/jjap.20.1211
Makimoto, Tsugio (1967) Experimental Study on the Out-Diffusion of Sb from Ge and Its Application to Transistors. Japanese Journal of Applied Physics, 6 (4) 487-494 doi:10.1143/jjap.6.487
Silard, Andrei P., Nani, Gabriel (1989) TILBW Bipolar Power Switching Transistor. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l356
Okuyama, Katsuro, Sugawara, Sumio, Kumagai, Yasuji (1980) Surface State Density of Evaporated SiO-Te MIS Structure. Japanese Journal of Applied Physics, 19 (11) 2299-2300 doi:10.1143/jjap.19.2299
Matoba, M., Katase, A., Sonoda, M. (1970) Standardization of Linear Circuits in Nuclear Pulse Measuring System. Japanese Journal of Applied Physics, 9 (7) 816-819 doi:10.1143/jjap.9.816
Higuchi, Hisayuki, Maki, Michiyoshi (1965) Observations of Channels of MOS Field Effect Transistors Using a Scanning-Electron Microscope. Japanese Journal of Applied Physics, 4 (12) 1021-1022 doi:10.1143/jjap.4.1021
Sumida, Hitoshi, Hirabayashi, Atsuo (1998) Noise Current Induced by Switching of a Dielectric Isolated Lateral Insulated Gate Bipolar Transistor on Silicon-on-Insulator. Japanese Journal of Applied Physics, 37. 5533-5534 doi:10.1143/jjap.37.5533
Makimoto, Toshiki, Kurishima, Kenji, Kobayashi, Takashi, Ishibashi, Tadao (1991) InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si. Japanese Journal of Applied Physics, 30. 3815-3817 doi:10.1143/jjap.30.3815
Ohta, Kuniichi (1984) Scaling Principle for Heterojunction Bipolar Integrated Circuit. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l913
Kuroda, Ekyo, Matsuda, Masatoshi, Kozuka, Hirotsugu, Maki, Michiyoshi (1979) Evaluation of Temperature Distribution of Melt in Silicon Ribbon Growth. Japanese Journal of Applied Physics, 18 (3) 471-477 doi:10.1143/jjap.18.471
 
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