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Isibashi, Yoshio, Yamaguchi, Masao (1970) Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs. Japanese Journal of Applied Physics, 9 (8) 1007-1008 doi:10.1143/jjap.9.1007

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Reference TypeJournal (article/letter/editorial)
TitleAnisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs
JournalJapanese Journal of Applied Physics
AuthorsIsibashi, YoshioAuthor
Yamaguchi, MasaoAuthor
Year1970 (August)Volume9
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1007Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14978061Long-form Identifiermindat:1:5:14978061:4
GUID0
Full ReferenceIsibashi, Yoshio, Yamaguchi, Masao (1970) Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs. Japanese Journal of Applied Physics, 9 (8) 1007-1008 doi:10.1143/jjap.9.1007
Plain TextIsibashi, Yoshio, Yamaguchi, Masao (1970) Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs. Japanese Journal of Applied Physics, 9 (8) 1007-1008 doi:10.1143/jjap.9.1007
In(1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics

See Also

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Ishibashi, Yoshio, Yamaguchi, Masao (1971) Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs II. Japanese Journal of Applied Physics, 10 (4) 525-526 doi:10.1143/jjap.10.525
Yamaguchi, Ko-ichi, Okamoto, Kotaro, Imai, Tetsuji (1985) Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 24. 1666-1671 doi:10.1143/jjap.24.1666
Yamaguchi, Ko-ichi, Okamoto, Kotaro (1989) Atom Beam-Irradiation Effects on Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1489
Yamaguchi, Ko-ichi, Okamoto, Kotaro (1991) Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric Pressure-Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l231
Yamashita, Akiyasu, Yamaguchi, Masao, Aoki, Tatsuo (1973) Impurity Profile Determination in Epitaxial GaAs Crystals on High-Resistivity Substrates. Japanese Journal of Applied Physics, 12 (8) 1267-1268 doi:10.1143/jjap.12.1267
Maruyama, Susumu, Yamaguchi, Masao (1969) Annealing Effect on GaAs Substrate Crystals. Japanese Journal of Applied Physics, 8 (1) 129-130 doi:10.1143/jjap.8.129
Yamashita, Akiyasu, Aoki, Tatsuo, Yamaguchi, Masao (1975) A Method for Determining a GaAs Epitaxial Layer Impurity Profile. Japanese Journal of Applied Physics, 14 (7) 991-998 doi:10.1143/jjap.14.991
Yamaguchi, Ko-ichi, Okamoto, Kotaro (1990) Analysis of Deposition Selectivity in Selective Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 29. 2351-2357 doi:10.1143/jjap.29.2351
Igo, Takeo, Toyoshima, Yoshio (1970) Noise Measurements in GaAs Avalanche Photodiodes. Japanese Journal of Applied Physics, 9 (10) 1286-1287 doi:10.1143/jjap.9.1286
Takeyama, Yoshio (1970) Lattice Defects near Twin Boundaries in GaAs Crystals. Japanese Journal of Applied Physics, 9 (11) 1420-1421 doi:10.1143/jjap.9.1420
Kageshima, Hiroyuki, Hibino, Hiroki, Yamaguchi, Hiroshi, Nagase, Masao (2011) Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface. Japanese Journal of Applied Physics, 50 (9) 95601 doi:10.1143/jjap.50.095601
 
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