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Yonezu, Hiroo (1970) Analysis on the Wave Confinement in the GaxAl1-xAs-GaAs Laser Diode. Japanese Journal of Applied Physics, 9 (8) 1013-1014 doi:10.1143/jjap.9.1013

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis on the Wave Confinement in the GaxAl1-xAs-GaAs Laser Diode
JournalJapanese Journal of Applied Physics
AuthorsYonezu, HirooAuthor
Year1970 (August)Volume9
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1013Search in ResearchGate
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Mindat Ref. ID14978067Long-form Identifiermindat:1:5:14978067:6
GUID0
Full ReferenceYonezu, Hiroo (1970) Analysis on the Wave Confinement in the GaxAl1-xAs-GaAs Laser Diode. Japanese Journal of Applied Physics, 9 (8) 1013-1014 doi:10.1143/jjap.9.1013
Plain TextYonezu, Hiroo (1970) Analysis on the Wave Confinement in the GaxAl1-xAs-GaAs Laser Diode. Japanese Journal of Applied Physics, 9 (8) 1013-1014 doi:10.1143/jjap.9.1013
In(1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics

See Also

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Yonezu, Hiroo, Sakuma, Isamu, Nannichi, Yasuo (1970) Gain Factor and Loss in a GaxAl1-xAs-GaAs Laser Diode. Japanese Journal of Applied Physics, 9 (2) 231-232 doi:10.1143/jjap.9.231
Yonezu, Hiroo, Kawaji, Akira, Yasuoka, Yoshihiro (1967) Quenching Response on a GaAs Dual Laser. Japanese Journal of Applied Physics, 6 (8) 1018 doi:10.1143/jjap.6.1018
Yonezu, Hiroo, Ueno, Masayasu, Kamejima, Taibun, Sakuma, Isamu (1974) Lasing Characteristics in a Degraded GaAs–AlxGa1-xAs Double Heterostructure Laser. Japanese Journal of Applied Physics, 13 (5) 835-842 doi:10.1143/jjap.13.835
Yonezu, Hiroo, Kobayashi, Kohroh, Sakuma, Isamu (1973) Threshold Current Density and Lasing Transverse Mode in a GaAs-AlxGa1-xAs Double Heterostructure Laser. Japanese Journal of Applied Physics, 12 (10) 1593-1599 doi:10.1143/jjap.12.1593
Yonezu, Hiroo, Mineta, Hiroshi, Kawaji, Akira (1969) Annealing Effects of a Diffused GaAs Junction Laser. Japanese Journal of Applied Physics, 8 (6) 766-767 doi:10.1143/jjap.8.766
Yonezu, Hiroo, Sakuma, Isamu, Kobayashi, Kohroh, Kamejima, Taibun, Ueno, Masayasu, Nannichi, Yasuo (1973) A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser. Japanese Journal of Applied Physics, 12 (10) 1585-1592 doi:10.1143/jjap.12.1585
Nannichi, Yasuo, Nishida, Katsuhiko, Mizusawa, Koji (1970) Determination of the Composition of GaxAl1-xAs from the Photoresponse of Schottky Barriers. Japanese Journal of Applied Physics, 9 (3) 332-333 doi:10.1143/jjap.9.332
Kawaji, Akira, Yonezu, Hiroo, Yasuoka, Yoshihiro (1965) Single-Filamentary Junction Laser. Japanese Journal of Applied Physics, 4 (12) 1024-1025 doi:10.1143/jjap.4.1024
Samonji, Katsuya, Yonezu, Hiroo, Ohshima, Naoki (2000) Lattice-Relaxation Process of (InAs)m(GaAs)nStrained Short-Period Superlattices Grown on GaAs. Japanese Journal of Applied Physics, 39. 2503-2507 doi:10.1143/jjap.39.2503
Kawaji, Akira, Yonezu, Hiroo, Yasuoka, Yoshihiro (1966) Double Quenching on a Selective Diffused Junction Laser. Japanese Journal of Applied Physics, 5 (4) 340-341 doi:10.1143/jjap.5.340
López, Máximo, Ikei, Takashi, Takano, Yasushi, Pak, Kangsa, Yonezu, Hiroo (1990) Initial Growth Mechanism of GaAs on Si(110) Japanese Journal of Applied Physics, 29. 551-554 doi:10.1143/jjap.29.551
 
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