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Arai, Yukihiko, Sakuta, Masaaki, Sakai, Koichi, Ishida, Toshimasa (1970) Zn-Te Compensated (Ga, Al)As Diodes with Negative Resistance. Japanese Journal of Applied Physics, 9 (8) 1015-1016 doi:10.1143/jjap.9.1015

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Reference TypeJournal (article/letter/editorial)
TitleZn-Te Compensated (Ga, Al)As Diodes with Negative Resistance
JournalJapanese Journal of Applied Physics
AuthorsArai, YukihikoAuthor
Sakuta, MasaakiAuthor
Sakai, KoichiAuthor
Ishida, ToshimasaAuthor
Year1970 (August)Volume9
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1015Search in ResearchGate
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Mindat Ref. ID14978068Long-form Identifiermindat:1:5:14978068:3
GUID0
Full ReferenceArai, Yukihiko, Sakuta, Masaaki, Sakai, Koichi, Ishida, Toshimasa (1970) Zn-Te Compensated (Ga, Al)As Diodes with Negative Resistance. Japanese Journal of Applied Physics, 9 (8) 1015-1016 doi:10.1143/jjap.9.1015
Plain TextArai, Yukihiko, Sakuta, Masaaki, Sakai, Koichi, Ishida, Toshimasa (1970) Zn-Te Compensated (Ga, Al)As Diodes with Negative Resistance. Japanese Journal of Applied Physics, 9 (8) 1015-1016 doi:10.1143/jjap.9.1015
In(1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics

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Arai, Yukihiko, Sakuta, Masaaki, Sakai, Koichi (1970) GaAs Light Emitting Device with Light-Activated Negative Resistance. Japanese Journal of Applied Physics, 9 (7) 853-854 doi:10.1143/jjap.9.853
Arai, Yukihiko, Murasugi, Keiji, Aso, Takeshi, Sakai, Koichi (1973) Green GaP Light Emitting Diodes with Negative Resistance. Japanese Journal of Applied Physics, 12 (4) 620-621 doi:10.1143/jjap.12.620
Chino, Ken-ichi, Ariyoshi, Hisashi, Mizushima, Yoshihiko (1969) Negative Resistance in Compensated Silicon Diodes. Japanese Journal of Applied Physics, 8 (6) 813-814 doi:10.1143/jjap.8.813
Migitaka, Masatoshi (1962) Silicon Negative Resistance Diodes. Japanese Journal of Applied Physics, 1 (6) 366 doi:10.1143/jjap.1.366
Migitaka, Masatoshi (1962) Silicon Negative Resistance Diodes. Japanese Journal of Applied Physics, 1 (3) 189-190 doi:10.1143/jjap.1.189
Tomioka, Kenichi, Matsui, Atsuo (1980) 9, 10-Dichloroanthracene as a Dye Laser Material. Japanese Journal of Applied Physics, 19 (5) 1015-1016 doi:10.1143/jjap.19.1015
Sakai, Akira, Ono, Haruhiko, Ishida, Koichi, Niino, Taeko, Tatsumi, Toru (1991) Crystallization of Amorphous Silicon with Clean Surfaces. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l941
Shimano, Noriyuki, Morimoto, Yasuo, Sakuta, Masaaki (1977) Behavior of Turnover Voltage under Pulsed Conditions in GaAs0.6P0.4P–I–N Diodes. Japanese Journal of Applied Physics, 16 (1) 201-202 doi:10.1143/jjap.16.201
Fukami, Toyoji, Homma, Kazuaki (1963) Negative Resistance Characteristics and Oscillation Phenomena in Si Diodes. Japanese Journal of Applied Physics, 2 (9) 535-541 doi:10.1143/jjap.2.535
Yahata, Akihiro, Kikuta, Toshio, Ishida, Koichi (1986) Three Midgap Levels in LEC n-GaAs Determined by DLTS Using Au and Al Schottky Barrier Diodes. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l133
Sawatari, Yuji, Arai, Michio (1968) Tunneling Characteristics of Al-Al2O3-Bi(Pb) and Bi(Te) Alloys Junctions. Japanese Journal of Applied Physics, 7 (9) 1132 doi:10.1143/jjap.7.1132
 
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