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Toyama, Masaharu (1970) Anomalous Capacitance in Gallium Phosphide Electroluminescentp-nJunctions. Japanese Journal of Applied Physics, 9 (8) 904-921 doi:10.1143/jjap.9.904

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Reference TypeJournal (article/letter/editorial)
TitleAnomalous Capacitance in Gallium Phosphide Electroluminescentp-nJunctions
JournalJapanese Journal of Applied Physics
AuthorsToyama, MasaharuAuthor
Year1970 (August)Volume9
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.904Search in ResearchGate
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Mindat Ref. ID14978077Long-form Identifiermindat:1:5:14978077:5
GUID0
Full ReferenceToyama, Masaharu (1970) Anomalous Capacitance in Gallium Phosphide Electroluminescentp-nJunctions. Japanese Journal of Applied Physics, 9 (8) 904-921 doi:10.1143/jjap.9.904
Plain TextToyama, Masaharu (1970) Anomalous Capacitance in Gallium Phosphide Electroluminescentp-nJunctions. Japanese Journal of Applied Physics, 9 (8) 904-921 doi:10.1143/jjap.9.904
In(1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics

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Toyama, Masaharu, Maeda, Keiji, Sekiwa, Tetsuo (1970) Green and Red Electroluminescences from Diffused Gallium Phosphidep-nJunctions. Japanese Journal of Applied Physics, 9 (5) 468-480 doi:10.1143/jjap.9.468
Toyama, Masaharu, Unno, Kazumi, Naito, Makoto (1969) Least Squares Analysis of Hall Data and Donor Levels in Gallium Phosphide. Japanese Journal of Applied Physics, 8 (9) 1118-1126 doi:10.1143/jjap.8.1118
Ikoma, Hideaki, Toyama, Masaharu (1970) Effect of Heat Treatment on Gallium Arsenide Crystals III. Electrical Properties of Thermally Convertedp-Type Crystals. Japanese Journal of Applied Physics, 9 (4) 376-384 doi:10.1143/jjap.9.376
Toyama, Masaharu (1969) Effect of Heat Treatment on Gallium Arsenide Crystals. I. Thermal Conversion in Excess Arsenic Vapor. Japanese Journal of Applied Physics, 8 (8) 1000-1007 doi:10.1143/jjap.8.1000
Somogyi, Karoly (1970) A Brief Comment on Deviation from the Ohm's Law in Gallium Phosphide. Japanese Journal of Applied Physics, 9 (2) 232-233 doi:10.1143/jjap.9.232
Toyama, Masaharu, Ikoma, Hideaki (1969) Effect of Heat Treatment on Gallium Arsenide Crystals II. Properties of Crystals Heat-Treated in Chalcogen Vapor. Japanese Journal of Applied Physics, 8 (12) 1449-1459 doi:10.1143/jjap.8.1449
Shiraki, Hiromitsu (1969) Dislocation Etch Pits on Solution Grown Gallium Phosphide. Japanese Journal of Applied Physics, 8 (2) 279 doi:10.1143/jjap.8.279
Miyauchi, Takeshi, Sonomura, Hajimu, Yamamoto, Nobuyuki (1969) Note on Impurity Oxygen in Gallium Phosphide. Japanese Journal of Applied Physics, 8 (7) 886-889 doi:10.1143/jjap.8.886
Sonomura, Hajimu, Miyauchi, Takeshi (1970) Injection Electroluminescence in Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1098-1102 doi:10.1143/jjap.9.1098
Furukawa, Yoshitaka, Kajiyama, Kenji, Aoki, Tatsuo (1966) Copper Diffused Gallium ArsenideP-NJunctions. Japanese Journal of Applied Physics, 5 (1) 39-50 doi:10.1143/jjap.5.39
Beppu, Tatsuro, Kasami, Akinobu, Toyama, Masaharu (1972) GaP Green Light-Emitting Diodes withp-n-p-nStructure. Japanese Journal of Applied Physics, 11 (9) 1338-1346 doi:10.1143/jjap.11.1338
 
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