Vote for your favorite mineral in #MinCup25! - Taenite vs. Nontronite
It's a mineral found mostly in the farthest reaches of space vs one so common an exhaustive list of localities is nigh impossible as alloy #taenite faces off against clay #nontronite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Kasami, Akinobu (1970) Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics. Japanese Journal of Applied Physics, 9 (8) 946-957 doi:10.1143/jjap.9.946

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleRecombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics
JournalJapanese Journal of Applied Physics
AuthorsKasami, AkinobuAuthor
Year1970 (August)Volume9
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.946Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14978082Long-form Identifiermindat:1:5:14978082:9
GUID0
Full ReferenceKasami, Akinobu (1970) Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics. Japanese Journal of Applied Physics, 9 (8) 946-957 doi:10.1143/jjap.9.946
Plain TextKasami, Akinobu (1970) Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics. Japanese Journal of Applied Physics, 9 (8) 946-957 doi:10.1143/jjap.9.946
In(1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Beppu, Tatsuro, Iwamoto, Masami, Sekiwa, Tetsuo, Kasami, Akinobu (1974) Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes. Japanese Journal of Applied Physics, 13 (7) 1179-1180 doi:10.1143/jjap.13.1179
Beppu, Tatsuro, Kasami, Akinobu, Toyama, Masaharu (1972) GaP Green Light-Emitting Diodes withp-n-p-nStructure. Japanese Journal of Applied Physics, 11 (9) 1338-1346 doi:10.1143/jjap.11.1338
Naito, Makoto, Kasami, Akinobu, Toyama, Masaharu (1971) Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy II. Effect of Substrate Orientation. Japanese Journal of Applied Physics, 10 (1) 109-116 doi:10.1143/jjap.10.109
Kasami, Akinobu, Naito, Makoto, Toyama, Masaharu, Maeda, Keiji (1969) Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy I. Effect of Oxygen and Tellurium Concentrations in the EpitaxialnLayer. Japanese Journal of Applied Physics, 8 (12) 1469-1480 doi:10.1143/jjap.8.1469
Kasami, Akinobu, Naito, Makoto, Toyama, Masaharu (1971) Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy III. Effect of Holding Time at Growth Temperature. Japanese Journal of Applied Physics, 10 (1) 117-127 doi:10.1143/jjap.10.117
Maeda, Keiji, Naito, Makoto, Kasami, Akinobu (1969) Efficiency of Red Luminescence in GaP. Japanese Journal of Applied Physics, 8 (6) 817-818 doi:10.1143/jjap.8.817
Maeda, Keiji, Kasami, Akinobu, Toyama, Masahru, Wakamatsu, Nobuyuki (1969) Minority Carrier Lifetime in GaP Electroluminescent Diodes. Japanese Journal of Applied Physics, 8 (1) 65-75 doi:10.1143/jjap.8.65
Toyama, Masaharu, Kasami, Akinobu (1972) Kinetics of Zn-O Complex Formation in GaP Crystal. Japanese Journal of Applied Physics, 11 (6) 860-868 doi:10.1143/jjap.11.860
Toyama, Masaharu, Unno, Kazumi, Kasami, Akinobu (1968) Valley-Orbit Splitting of Donor Level in GaP. Japanese Journal of Applied Physics, 7 (11) 1418 doi:10.1143/jjap.7.1418a
Toyama, Masaharu, Naito, Makoto, Kasami, Akinobu (1969) Electron Mobility and Impurity Concentration inn-GaP Crystals Grown by Slow Cooling of Ga Solution. Japanese Journal of Applied Physics, 8 (3) 358-365 doi:10.1143/jjap.8.358
Maeda, Keiji (1970) Double Injection in GaP Electroluminescent Diodes. Japanese Journal of Applied Physics, 9 (1) 71-80 doi:10.1143/jjap.9.71
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 15, 2025 04:58:26
Go to top of page