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Ohnishi, Hideomi, Hamakawa, Yoshihiro (1977) Low Threshold DC Electroluminescence in ZnSe: Mn Films Deposited onn-GaAs Single Crystal. Japanese Journal of Applied Physics, 16 (6) 981-985 doi:10.1143/jjap.16.981

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Reference TypeJournal (article/letter/editorial)
TitleLow Threshold DC Electroluminescence in ZnSe: Mn Films Deposited onn-GaAs Single Crystal
JournalJapanese Journal of Applied Physics
AuthorsOhnishi, HideomiAuthor
Hamakawa, YoshihiroAuthor
Year1977 (June)Volume16
Issue6
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.16.981Search in ResearchGate
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Mindat Ref. ID14982022Long-form Identifiermindat:1:5:14982022:8
GUID0
Full ReferenceOhnishi, Hideomi, Hamakawa, Yoshihiro (1977) Low Threshold DC Electroluminescence in ZnSe: Mn Films Deposited onn-GaAs Single Crystal. Japanese Journal of Applied Physics, 16 (6) 981-985 doi:10.1143/jjap.16.981
Plain TextOhnishi, Hideomi, Hamakawa, Yoshihiro (1977) Low Threshold DC Electroluminescence in ZnSe: Mn Films Deposited onn-GaAs Single Crystal. Japanese Journal of Applied Physics, 16 (6) 981-985 doi:10.1143/jjap.16.981
In(1977, June) Japanese Journal of Applied Physics Vol. 16 (6) Japan Society of Applied Physics

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Ohnishi, Hideomi, Hamakawa, Yoshihiro (1980) Pulse-Excited Characteristics of Au/ZnSe : Mn/n-GaAs Low Threshold Thin Film DC EL Cell. Japanese Journal of Applied Physics, 19 (5) 873-878 doi:10.1143/jjap.19.873
Ohnishi, Hideomi, Hamakawa, Yoshihiro (1978) Thin Film DC EL Cell of Au/ZnSe: Mn/n-GaAs Hetero-Structure with the Threshold Voltage of 20 V. Japanese Journal of Applied Physics, 17 (7) 1225-1230 doi:10.1143/jjap.17.1225
Nishino, Taneo, Hamakawa, Yoshihiro (1977) Preparation and Properties of InS Single Crystals. Japanese Journal of Applied Physics, 16 (8) 1291-1300 doi:10.1143/jjap.16.1291
Doi, T., Ohnishi, H., Ieyasu, K., Hamakawa, Y. (1980) Bright dc electroluminescence in ZnSeā€ZnS:Mn thin films. Journal of Applied Physics, 51 (8). 4555-4557 doi:10.1063/1.328285
Imai, Tadayuki, Okuyama, Masanori, Hamakawa, Yoshihiro (1991) PbTiO3Thin Films Deposited by Laser Ablation. Japanese Journal of Applied Physics, 30. 2163-2166 doi:10.1143/jjap.30.2163
Higuma, Yasuyuki, Tanaka, Katsuhiko, Nakagawa, Taichi, Kariya, Tetsuya, Hamakawa, Yoshihiro (1977) Epitaxial Growth of PLZT Single Crystal Film on SrTiO3by RF Sputtering. Japanese Journal of Applied Physics, 16 (9) 1707-1708 doi:10.1143/jjap.16.1707
Soeya, Teruko, Kimura, Yoshihiro (1966) DC Electroluminescence in Thin Films of Zinc Sulfide. Japanese Journal of Applied Physics, 5 (9) 838-839 doi:10.1143/jjap.5.838
Takagi, Toshinori, Yamada, Isao (1973) DC Electroluminescence in Mn-Implanted ZnS Thin Films. Japanese Journal of Applied Physics, 12 (2) 315-316 doi:10.1143/jjap.12.315
Sohn, Sang Ho, Hamakawa, Yoshihiro (1993) Electroluminescence in ZnS1-xTex:CeF3Thin-Film Devices Prepared in Oxygen Atmosphere. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l593
Nishino, Taneo, Yanagida, Toshio, Hamakawa, Yoshihiro (1972) Impurity Electroabsorption of GaAs. Japanese Journal of Applied Physics, 11 (8) 1221 doi:10.1143/jjap.11.1221
Fujiwara, Yasufumi, Nishino, Taneo, Hamakawa, Yoshihiro (1982) Cr-Related Intracenter Luminescence in GaAs: Cr. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l727
 
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