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Terada, Kazuo, Muta, Hiroki (1979) A New Method to Determine Effective MOSFET Channel Length. Japanese Journal of Applied Physics, 18 (5) 953-959 doi:10.1143/jjap.18.953

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Reference TypeJournal (article/letter/editorial)
TitleA New Method to Determine Effective MOSFET Channel Length
JournalJapanese Journal of Applied Physics
AuthorsTerada, KazuoAuthor
Muta, HirokiAuthor
Year1979 (May)Volume18
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.18.953Search in ResearchGate
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Mindat Ref. ID14983208Long-form Identifiermindat:1:5:14983208:5
GUID0
Full ReferenceTerada, Kazuo, Muta, Hiroki (1979) A New Method to Determine Effective MOSFET Channel Length. Japanese Journal of Applied Physics, 18 (5) 953-959 doi:10.1143/jjap.18.953
Plain TextTerada, Kazuo, Muta, Hiroki (1979) A New Method to Determine Effective MOSFET Channel Length. Japanese Journal of Applied Physics, 18 (5) 953-959 doi:10.1143/jjap.18.953
In(1979, May) Japanese Journal of Applied Physics Vol. 18 (5) Japan Society of Applied Physics

See Also

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Tsuji, Katsuhiro, Terada, Kazuo, Fujisaka, Hisato (2018) Study on effective MOSFET channel length extracted from gate capacitance. Japanese Journal of Applied Physics, 57 (1) 16601 doi:10.7567/jjap.57.016601
Jain, Sanjay (1988) A New Method for Measurement of MOSFET Channel Length. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1559
Terada, Kazuo, Sanai, Kazuhiko, Tsuji, Katsuhiro (2014) Reconsideration of effective channel length for metal–oxide–semiconductor field-effect transistor. Japanese Journal of Applied Physics, 53 (6) 64303 doi:10.7567/jjap.53.064303
Shimatani, Tamio, Pidin, Sergey, Koyanagi, Mitsumasa (1997) New Electrically Thinned Intrinsic-Channel SOI MOSFET with 0.01 µm Channel Length. Japanese Journal of Applied Physics, 36. 1659-1662 doi:10.1143/jjap.36.1659
Jain, Sanjay (1989) Equivalence and Accuracy of MOSFET Channel Length Measurement Techniques. Japanese Journal of Applied Physics, 28. 160-166 doi:10.1143/jjap.28.160
Mada, Junji (1979) An Analytical Method to Determine the Bubble Peak Velocity from Data Containing Overshoot. Japanese Journal of Applied Physics, 18 (1) 95-98 doi:10.1143/jjap.18.95
Shi, Yi, Saito, Kenichi, Ishikuro, Hiroki, Hiramoto, Toshiro (1999) Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals. Japanese Journal of Applied Physics, 38. 2453-2456 doi:10.1143/jjap.38.2453
Pidin, Sergey, Koyanagi, Mitsumasa (1997) Two-Dimensional Analytical Subthreshold Model and Optimal Scaling of Fully-Depleted SOI MOSFET Down to 0.1 µm Channel Length. Japanese Journal of Applied Physics, 36. 1497-1504 doi:10.1143/jjap.36.1497
Eda, Kazuo, Matsuoka, Michio (1979) Current Oscillation Phenomena in Nonohmic ZnO Ceramics. Japanese Journal of Applied Physics, 18 (5) 999-1000 doi:10.1143/jjap.18.999
Yi, You-Wen, Masu, Kazuya, Tsubouchi, Kazuo, Mikoshiba, Nobuo (1988) Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1958
Eda, Kazuo, Iga, Atsushi, Matsuoka, Michio (1979) Current Creep in Nonohmic ZnO Ceramics. Japanese Journal of Applied Physics, 18 (5) 997-998 doi:10.1143/jjap.18.997
 
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