Reference Type | Journal (article/letter/editorial) |
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Title | Photoluminescence Analysis of Impurities in Epitaxial Silicon Crystals |
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Journal | Japanese Journal of Applied Physics |
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Authors | Tajima, Michio | Author |
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Nomura, Masayoshi | Author |
Year | 1981 (October) | Volume | 20 |
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Issue | 10 |
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Publisher | Japan Society of Applied Physics |
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DOI | doi:10.1143/jjap.20.l697Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14984652 | Long-form Identifier | mindat:1:5:14984652:5 |
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GUID | 0 |
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Full Reference | Tajima, Michio, Nomura, Masayoshi (1981) Photoluminescence Analysis of Impurities in Epitaxial Silicon Crystals. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l697 |
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Plain Text | Tajima, Michio, Nomura, Masayoshi (1981) Photoluminescence Analysis of Impurities in Epitaxial Silicon Crystals. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l697 |
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In | (1981, October) Japanese Journal of Applied Physics Vol. 20 (10) Japan Society of Applied Physics |
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