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Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate. Japanese Journal of Applied Physics, 20 (11) 2253-2254 doi:10.1143/jjap.20.2253

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Reference TypeJournal (article/letter/editorial)
TitleLiquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate
JournalJapanese Journal of Applied Physics
AuthorsKobayashi, NaokiAuthor
Horikoshi, YoshijiAuthor
Year1981 (November)Volume20
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.2253Search in ResearchGate
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Mindat Ref. ID14984705Long-form Identifiermindat:1:5:14984705:8
GUID0
Full ReferenceKobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate. Japanese Journal of Applied Physics, 20 (11) 2253-2254 doi:10.1143/jjap.20.2253
Plain TextKobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate. Japanese Journal of Applied Physics, 20 (11) 2253-2254 doi:10.1143/jjap.20.2253
In(1981, November) Japanese Journal of Applied Physics Vol. 20 (11) Japan Society of Applied Physics

See Also

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Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate. Japanese Journal of Applied Physics, 20 (12) 2301-2305 doi:10.1143/jjap.20.2301
Kobayashi, Naoki, Horikoshi, Yoshiji (1982) Pseudoquaternary Phase Diagram Calculation of In1-xGaxAs1-ySbyQuaternary System. Japanese Journal of Applied Physics, 21. 201-202 doi:10.1143/jjap.21.201
Kobayashi, Naoki, Horikoshi, Yoshiji, Uemura, Chikao (1979) Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers. Japanese Journal of Applied Physics, 18 (11) 2169-2170 doi:10.1143/jjap.18.2169
Fukui, Takashi, Horikoshi, Yoshiji (1981) Organometallic VPE Growth of InAs1-x-ySbxPyon InAs. Japanese Journal of Applied Physics, 20 (3) 587-591 doi:10.1143/jjap.20.587
Fukui, Takashi, Horikoshi, Yoshiji (1979) Organometallic VPE Growth of InAs. Japanese Journal of Applied Physics, 18 (11) 2157-2158 doi:10.1143/jjap.18.2157
Horikoshi, Yoshiji, Saito, Hisao, Takanashi, Yoshifumi (1981) Simultaneous Diffusion of Zinc and Cadmium into InAs. Japanese Journal of Applied Physics, 20 (2) 437-438 doi:10.1143/jjap.20.437
Fukui, Takashi, Horikoshi, Yoshiji (1980) Organometallic VPE Growth of InAs1-xSbxon InAs. Japanese Journal of Applied Physics, 19 (1) doi:10.1143/jjap.19.l53
Horikoshi, Yoshiji, Furukawa, Yoshitaka (1975) Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate. Japanese Journal of Applied Physics, 14 (11) 1727-1732 doi:10.1143/jjap.14.1727
Kobayashi, Naoki, Horikoshi, Yoshiji (1990) Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l236
Kobayashi, Naoki, Horikoshi, Yoshiji (1989) Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1880
Nishida, Toshio, Kobayashi, Naoki (1996) Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l930
 
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