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Horiike, Yasuhiro, Sugawara, Takuji, Okano, Haruo, Shibagaki, Masahiro, Ueda, Yoshiya (1981) Cl2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma. Japanese Journal of Applied Physics, 20 (4) 803-804 doi:10.1143/jjap.20.803

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Reference TypeJournal (article/letter/editorial)
TitleCl2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma
JournalJapanese Journal of Applied Physics
AuthorsHoriike, YasuhiroAuthor
Sugawara, TakujiAuthor
Okano, HaruoAuthor
Shibagaki, MasahiroAuthor
Ueda, YoshiyaAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.803Search in ResearchGate
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Mindat Ref. ID14984943Long-form Identifiermindat:1:5:14984943:4
GUID0
Full ReferenceHoriike, Yasuhiro, Sugawara, Takuji, Okano, Haruo, Shibagaki, Masahiro, Ueda, Yoshiya (1981) Cl2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma. Japanese Journal of Applied Physics, 20 (4) 803-804 doi:10.1143/jjap.20.803
Plain TextHoriike, Yasuhiro, Sugawara, Takuji, Okano, Haruo, Shibagaki, Masahiro, Ueda, Yoshiya (1981) Cl2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma. Japanese Journal of Applied Physics, 20 (4) 803-804 doi:10.1143/jjap.20.803
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Okano, Haruo, Horiike, Yasuhiro (1981) Si Etch Rate and Etch Yield with Ar+/Cl2System. Japanese Journal of Applied Physics, 20 (12) 2429-2430 doi:10.1143/jjap.20.2429
Okano, Haruo, Horiike, Yasuhiro, Yamazaki, Takashi, Tokura, Tsunemasa (1984) Etching Characteristics of n+Poly-Si and Al Employing a Magnetron Plasma. Japanese Journal of Applied Physics, 23. 482-486 doi:10.1143/jjap.23.482
Horiike, Yasuhiro, Shibagaki, Masahiro, Kadono, Katsuo (1979) Si and SiO2Etching Characteristics by Fluorocarbon Ion Beam. Japanese Journal of Applied Physics, 18 (12) 2309-2310 doi:10.1143/jjap.18.2309
Horiike, Yasuhiro, Okano, Haruo, Yamazaki, Takashi, Horie, Hiromichi (1981) High-Rate Reactive Ion Etching of SiO2Using a Magnetron Discharge. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l817
Okano, Haruo, Horiike, Yasuhiro (1982) Reactive Ion Beam Etching of SiO2and Poly-Si Employing C2F6, SiF4and BF3Gases. Japanese Journal of Applied Physics, 21. 696-701 doi:10.1143/jjap.21.696
Shibagaki, Masahiro, Horiike, Yasuhiro (1980) Si and SiO2Etching Characteristics Using Reactive Ion Etching with CF4-Cl2Gas Mixture. Japanese Journal of Applied Physics, 19 (8) 1579-1580 doi:10.1143/jjap.19.1579
Kubota, Kazuhiro, Matsumoto, Hiroyuki, Shindo, Haruo, Shingubara, Shoso, Horiike, Yasuhiro (1995) Measurement of Fluorocarbon Radicals Generated fromC4F8/H2Inductively Coupled Plasma: Study onSiO2Selective Etching Kinetics. Japanese Journal of Applied Physics, 34. 2119-2124 doi:10.1143/jjap.34.2119
Horiike, Yasuhiro, Yamazaki, Takashi, Shibagaki, Masahiro, Kurisaki, Tetsuo (1982) Aluminum Reactive Ion Etching Employing CCl4+Cl2Mixture. Japanese Journal of Applied Physics, 21. 1412-1420 doi:10.1143/jjap.21.1412
Arikado, Tsunetoshi, Horioka, Keiji, Sekine, Makoto, Okano, Haruo, Horiike, Yasuhiro (1988) Single Silicon Etching Profile Simulation. Japanese Journal of Applied Physics, 27. 95-99 doi:10.1143/jjap.27.95
Shindo, Haruo, Hashimoto, Tetsuro, Horiike, Yasuhiro (1991) Si Etching with Low Ion Energy in Low-Pressure Electron Cyclotron Resonance Plasma Generated by Longitudinal and Multipole Magnetic Fields. Japanese Journal of Applied Physics, 30. 882-885 doi:10.1143/jjap.30.882
Sekine, Makoto, Okano, Haruo, Horiike, Yasuhiro (1986) Excimer Laser Photochemical Directional Etching of Phosphorous Doped Poly-Crystalline Silicon. Japanese Journal of Applied Physics, 25. 1944-1947 doi:10.1143/jjap.25.1944
 
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