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Ishiwara, Hiroshi, Saitoh, Shuichi, Hikosaka, Kohki (1981) Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface. Japanese Journal of Applied Physics, 20 (5) 843-848 doi:10.1143/jjap.20.843

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Reference TypeJournal (article/letter/editorial)
TitleTheoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
JournalJapanese Journal of Applied Physics
AuthorsIshiwara, HiroshiAuthor
Saitoh, ShuichiAuthor
Hikosaka, KohkiAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.843Search in ResearchGate
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Mindat Ref. ID14984973Long-form Identifiermindat:1:5:14984973:1
GUID0
Full ReferenceIshiwara, Hiroshi, Saitoh, Shuichi, Hikosaka, Kohki (1981) Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface. Japanese Journal of Applied Physics, 20 (5) 843-848 doi:10.1143/jjap.20.843
Plain TextIshiwara, Hiroshi, Saitoh, Shuichi, Hikosaka, Kohki (1981) Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface. Japanese Journal of Applied Physics, 20 (5) 843-848 doi:10.1143/jjap.20.843
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

See Also

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Saitoh, Shuichi, Ishiwara, Hiroshi, Asano, Tanemasa, Furukawa, Seijiro (1981) Single Crystalline Silicide Formation. Japanese Journal of Applied Physics, 20 (9) 1649-1656 doi:10.1143/jjap.20.1649
Saitoh, Shuichi, Sugii, Toshihiro, Ishiwara, Hiroshi, Furukawa, Seijiro (1981) Growth Conditions of Deposited Si Films in Solid Phase Epitaxy. Japanese Journal of Applied Physics, 20 (2) doi:10.1143/jjap.20.l130
Ishiwara, Hiroshi, Saitoh, Shuichi, Furukawa, Seijiro (1980) Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation. Japanese Journal of Applied Physics, 19 (5) 831-837 doi:10.1143/jjap.19.831
Hikosaka, Kohki, Mimura, Takashi, Joshin, Kazukiyo (1981) Selective Dry Etching of AlGaAs-GaAs Heterojunction. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l847
Ishiwara, Hiroshi, Hikosaka, Kohki, Nagatomo, Masao, Furukawa, Seijiro (1979) Characterization of epitaxial metal silicide films grown on silicon. Surface Science, 86. 711-717 doi:10.1016/0039-6028(79)90451-5
Mimura, Takashi, Hiyamizu, Satoshi, Joshin, Kazukiyo, Hikosaka, Kohki (1981) Enhancement-Mode High Electron Mobility Transistors for Logic Applications. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l317
Ishiwara, Hiroshi, Hikosaka, Kohki, Furukawa, Seijiro (1978) Channeling studies of radiation damage in metalā€silicides. Applied Physics Letters, 32 (1). 23-24 doi:10.1063/1.89818
Mimura, Takashi, Joshin, Kazukiyo, Hiyamizu, Satoshi, Hikosaka, Kohki, Abe, Masayuki (1981) High Electron Mobility Transistor Logic. Japanese Journal of Applied Physics, 20 (8) doi:10.1143/jjap.20.l598
Furukawa, Seijiro, Matsumura, Hideki, Ishiwara, Hiroshi (1972) Theoretical Considerations on Lateral Spread of Implanted Ions. Japanese Journal of Applied Physics, 11 (2) 134-142 doi:10.1143/jjap.11.134
Sorimachi, Yoshio, Ishiwara, Hiroshi, Yamamoto, Hiroshi, Furukawa, Seijiro (1982) Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films. Japanese Journal of Applied Physics, 21. 752-756 doi:10.1143/jjap.21.752
Ishiwara, Hiroshi, Hikosaka, Kohki, Furukawa, Seijiro (1979) Channeling and backscattering studies of the crystalline perfection and the thermal stability of epitaxial PtSi films on Si. Journal of Applied Physics, 50 (8). 5302pp. doi:10.1063/1.326628
 
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