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Asano, Tanemasa, Atanassov, Rosen D., Ishiwara, Hiroshi, Furukawa, Seijiro (1981) Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation. Japanese Journal of Applied Physics, 20 (5) 901-907 doi:10.1143/jjap.20.901

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Reference TypeJournal (article/letter/editorial)
TitleFormation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
JournalJapanese Journal of Applied Physics
AuthorsAsano, TanemasaAuthor
Atanassov, Rosen D.Author
Ishiwara, HiroshiAuthor
Furukawa, SeijiroAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.901Search in ResearchGate
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Mindat Ref. ID14984983Long-form Identifiermindat:1:5:14984983:0
GUID0
Full ReferenceAsano, Tanemasa, Atanassov, Rosen D., Ishiwara, Hiroshi, Furukawa, Seijiro (1981) Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation. Japanese Journal of Applied Physics, 20 (5) 901-907 doi:10.1143/jjap.20.901
Plain TextAsano, Tanemasa, Atanassov, Rosen D., Ishiwara, Hiroshi, Furukawa, Seijiro (1981) Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation. Japanese Journal of Applied Physics, 20 (5) 901-907 doi:10.1143/jjap.20.901
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

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Saitoh, Shuichi, Ishiwara, Hiroshi, Asano, Tanemasa, Furukawa, Seijiro (1981) Single Crystalline Silicide Formation. Japanese Journal of Applied Physics, 20 (9) 1649-1656 doi:10.1143/jjap.20.1649
Asano, Tanemasa, Ishiwara, Hiroshi, Lee, Hee Chul, Tsutsui, Kazuo, Furukawa, Seijiro (1986) Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2and GaAs. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l139
Asano, Tanemasa, Ishiwara, Hiroshi, Orihara, Kouzo, Furukawa, Seijiro (1983) Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l118
Kim, Kwang Ho, Ishiwara, Hiroshi, Asano, Tanemasa, Furukawa, Seijiro (1988) Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2180
Lee, Hee Chul, Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1986) Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF2/Si Structures. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l595
Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1989) Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing. Japanese Journal of Applied Physics, 28. 1784-1788 doi:10.1143/jjap.28.1784
Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1988) Flattening the Surface of CaF2/Si(100) Structures by Post-Growth Annealing. Japanese Journal of Applied Physics, 27. 1193-1198 doi:10.1143/jjap.27.1193
Lee, Hee Chul, Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro (1988) Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si Structures. Japanese Journal of Applied Physics, 27. 1616-1625 doi:10.1143/jjap.27.1616
Ishiwara, Hiroshi, Tsutsui, Kazuo, Asano, Tanemasa, Furukawa, Seijiro (1984) Epitaxial Relations in Lattice-Matched (Ca, Sr)F2Films Grown on GaAs{111} and Ge(111) Substrates. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l803
Fukada, Tsuyoshi, Asano, Tanemasa, Frukawa, Seijiro, Ishiwara, Hiroshi (1987) Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films. Japanese Journal of Applied Physics, 26. 117-121 doi:10.1143/jjap.26.117
Ishiwara, Hiroshi, Kanemaru, Seigo, Asano, Tanemasa, Furukawa, Seijiro (1985) Control of Crystal Orientations in Lattice-Mismatched SrF2and (Ca, Sr)F2Films on Si Substrates by Intermediate CaF2Films. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l56
 
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