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Naito, Hiroyoshi, Nakaishi, Masafumi, Okuda, Masahiro, Nakau, Tanehiro, Matsushita, Tatsuhiko (1984) Transient Photocurrent in Amorphous (As2Se3):Te Thin Films. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l458

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Reference TypeJournal (article/letter/editorial)
TitleTransient Photocurrent in Amorphous (As2Se3):Te Thin Films
JournalJapanese Journal of Applied Physics
AuthorsNaito, HiroyoshiAuthor
Nakaishi, MasafumiAuthor
Okuda, MasahiroAuthor
Nakau, TanehiroAuthor
Matsushita, TatsuhikoAuthor
Year1984 (July 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.l458Search in ResearchGate
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Mindat Ref. ID14987579Long-form Identifiermindat:1:5:14987579:2
GUID0
Full ReferenceNaito, Hiroyoshi, Nakaishi, Masafumi, Okuda, Masahiro, Nakau, Tanehiro, Matsushita, Tatsuhiko (1984) Transient Photocurrent in Amorphous (As2Se3):Te Thin Films. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l458
Plain TextNaito, Hiroyoshi, Nakaishi, Masafumi, Okuda, Masahiro, Nakau, Tanehiro, Matsushita, Tatsuhiko (1984) Transient Photocurrent in Amorphous (As2Se3):Te Thin Films. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l458
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

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Natio, Hiroyoshi, Nakaishi, Masafumi, Nakayama, Hiroshi, Okuda, Masahiro, Nakau, Tanehiro, Suzuki, Akio, Matsushita, Tatsuhiko (1983) Isothermal Photocurrent Transient Spectroscopy of Gap States in Amorphous Chalcogenide Semiconductors. Japanese Journal of Applied Physics, 22. 1818-1821 doi:10.1143/jjap.22.1818
Naito, Hiroyoshi, Motomura, Kohta, Okuda, Masahiro, Nakau, Tanehiro, Matsushita, Tatsuhiko (1984) Transient Photodischarge Characteristics of Photoconductors with Dispersive Transport. Japanese Journal of Applied Physics, 23. 296-301 doi:10.1143/jjap.23.296
Naito, Hiroyoshi, Okuda, Masahiro, Matsushita, Tatsuhiko, Nakau, Tanehiro (1980) The Density of Localized States in Amorphous InxSe1-xThin Films. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l513
Naito, Hiroyoshi, Motomura, Kohta, Okuda, Masahiro, Nakau, Tanehiro, Matsushita, Tatsuhiko (1983) Gap State Spectroscopy in Amorphous Selenium Photoreceptors. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l531
Okuda, Masahiro, Motomura, Kota, Naito, Hiroyoshi, Matsushita, Tatsuhiko, Nakau, Tanehiro (1982) Effect of Electron Traps on Residual Voltage in Chalcogenide Photoreceptors. Japanese Journal of Applied Physics, 21. 1293-1297 doi:10.1143/jjap.21.1293
Matsushita, Tatsuhiko, Suzuki, Akio, Okuda, Masahiro, Naitoh, Hiroyoshi, Nakau, Tanehiro (1983) Reversible Optical Effects in Parylene-Coated Amorphous GaxSe1-xFilms. Japanese Journal of Applied Physics, 22. 760 doi:10.1143/jjap.22.760
Matsushita, Tatsuhiko, Suzuki, Akio, Nakau, Tanehiro, Okuda, Masahiro, Rhee, Jung Chul, Naito, Hiroyoshi (1987) Effect of Ge Addition on Ga-Se-Te System Reversible Optical Recording Media. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l62
Okuda, Masahiro, Motomura, Kota, Naito, Hiroyoshi, Matsushita, Tatsuhiko, Nakau, Tanehiro (1982) A Theoretical Investigation of the Residual Voltage on Electrophotographic Plates. Japanese Journal of Applied Physics, 21. 1127-1134 doi:10.1143/jjap.21.1127
Matsushita, Tatsuhiko, Okuda, Masahiro, Suzuki, Akio, Naito, Hiroyoshi, Nakau, Tanehiro (1981) Amorphous SixSe1-x–SnO2Thin Film Photovoltaic Devices. Japanese Journal of Applied Physics, 20. 147 doi:10.7567/jjaps.20s2.147
Naito, Hiroyoshi, Nakaishi, Masafumi, Matsushita, Tatsuhiko, Okuda, Masahiro (1985) Gap state spectroscopy in amorphous As2Se3 films. Journal of Non-Crystalline Solids, 77. 1183-1186 doi:10.1016/0022-3093(85)90869-5
Suzuki, Akio, Matsushita, Tatsuhiko, Okuda, Masahiro, Naitoh, Hiroyoshi, Nakau, Tanehiro (1982) A Photo-Induced Memory Effect in Films of the Si–Se–In System. Japanese Journal of Applied Physics, 21. 407-408 doi:10.1143/jjap.21.407
 
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