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Matsui, Kazunori, Kobayashi, Junji, Fukunaga, Toshiaki, Ishida, Koichi, Nakashima, Hisao (1987) Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1122

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Reference TypeJournal (article/letter/editorial)
TitleDisordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
JournalJapanese Journal of Applied Physics
AuthorsMatsui, KazunoriAuthor
Kobayashi, JunjiAuthor
Fukunaga, ToshiakiAuthor
Ishida, KoichiAuthor
Nakashima, HisaoAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1122Search in ResearchGate
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Mindat Ref. ID14989822Long-form Identifiermindat:1:5:14989822:7
GUID0
Full ReferenceMatsui, Kazunori, Kobayashi, Junji, Fukunaga, Toshiaki, Ishida, Koichi, Nakashima, Hisao (1987) Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1122
Plain TextMatsui, Kazunori, Kobayashi, Junji, Fukunaga, Toshiaki, Ishida, Koichi, Nakashima, Hisao (1987) Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1122
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

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Matsui, Kazunori, Kobayashi, Junji, Fukunaga, Toshiaki, Ishida, Koichi, Nakashima, Hisao (1986) Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l651
Kobayashi, Junji, Nakajima, Masato, Bamba, Yasuo, Fukunaga, Toshiaki, Matsui, Kazunori, Ishida, Koji, Nakashima, Hisao, Ishida, Koichi (1986) SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l385
Kobayashi, Junji, Nakajima, Masato, Fukunaga, Toshiaki, Takamori, Takeshi, Ishida, Koji, Nakashima, Hisao, Ishida, Koichi (1986) SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l736
Ishida, Koji, Matsui, Kazunori, Fukunaga, Toshiaki, Kobayashi, Junji, Morita, Tetsuo, Miyauchi, Eizo, Nakashima, Hisao (1987) Scan speed effects on enhanced disordering of GaAs‐AlGaAs superlattices by focused Si ion beam implantation. Applied Physics Letters, 51 (2). 109-111 doi:10.1063/1.98639
Ishida, Koji, Miyauchi, Eizo, Morita, Tetsuo, Takamori, Takeshi, Fukunaga, Toshiaki, Hashimoto, Hisao, Nakashima, Hisao (1987) Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l285
Kobayashi, Junji, Fukunaga, Toshiaki, Ishida, Koichi, Nakashima, Hisao, Flood, Jane D., Bahir, Gad, Merz, James L. (1987) Effect of rapid thermal annealing for the compositional disordering of Si‐implanted AlGaAs/GaAs superlattices. Applied Physics Letters, 50 (9). 519-521 doi:10.1063/1.98145
Takamori, Takeshi, Fukunaga, Toshiaki, Kobayashi, Junji, Ishida, Koichi, Nakashima, Hisao (1987) Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates. Japanese Journal of Applied Physics, 26. 1097-1101 doi:10.1143/jjap.26.1097
Matsui, Kazunori, Takatani, Shin-ichiro, Fukunaga, Toshiaki, Narusawa, Tadashi, Bamba, Yasuo, Nakashima, Hisao (1986) Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si+-Ion Implantation. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l391
Ishida, Koji, Matsui, Kazunori, Fukunaga, Toshiaki, Takamori, Takeshi, Nakashima, Hisao (1986) Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l690
Matsui, Kazunori, Takamori, Takeshi, Fukunaga, Toshiaki, Narusawa, Tadashi, Nakashima, Hisao (1987) Ion-Implantation Induced Damage in AlxGa1-xAs and Superlattices Studied by Rutherford Backscattering. Japanese Journal of Applied Physics, 26. 482-486 doi:10.1143/jjap.26.482
Uematsu, Masashi, Yanagawa, Fumihiko (1987) Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1407
 
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