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Sameshima, Toshiyuki, Usui, Setsuo (1987) Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1208

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser
JournalJapanese Journal of Applied Physics
AuthorsSameshima, ToshiyukiAuthor
Usui, SetsuoAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1208Search in ResearchGate
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Mindat Ref. ID14989853Long-form Identifiermindat:1:5:14989853:1
GUID0
Full ReferenceSameshima, Toshiyuki, Usui, Setsuo (1987) Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1208
Plain TextSameshima, Toshiyuki, Usui, Setsuo (1987) Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1208
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

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Sameshima, Toshiyuki, Usui, Setsuo, Tomita, Hisashi (1987) Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1678
Sameshima, Toshiyuki, Hara, Masaki, Usui, Setsuo (1990) Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l548
Sameshima, Toshiyuki, Tomita, Hisashi, Usui, Setsuo (1988) In SituObservation of Pulsed Laser Doping. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1935
Sameshima, Toshiyuki, Hara, Masaki, Sano, Naoki, Usui, Setsuo (1990) Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1363
Sameshima, Toshiyuki, Hara, Masaki, Usui, Setsuo (1989) XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's. Japanese Journal of Applied Physics, 28. 1789-1793 doi:10.1143/jjap.28.1789
Sameshima, Toshiyuki, Hara, Masaki, Usui, Setsuo (1989) Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2131
Higashi, Seiichiro, Sameshima, Toshiyuki (2001) Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films. Japanese Journal of Applied Physics, 40. 480-485 doi:10.1143/jjap.40.480
Sameshima, Toshiyuki (1993) Self Organized Grain Growth Larger than 1 µm through Pulsed-Laser-Induced Melting of Silicon Films. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1485
Higashi, Seiichiro, Ando, Nobuyuki, Kamisako, Koichi, Sameshima, Toshiyuki (2001) Stress in Pulsed-Laser-Crystallized Silicon Films. Japanese Journal of Applied Physics, 40. 731-735 doi:10.1143/jjap.40.731
Sameshima, Toshiyuki, Watakabe, Hajime, Andoh, Nobuyuki, Higashi, Seiichiro (2006) Pulsed Laser Annealing of Thin Silicon Films. Japanese Journal of Applied Physics, 45 (4) 2437-2440 doi:10.1143/jjap.45.2437
Tsunoda, Yoshiyuki, Sameshima, Toshiyuki, Higashi, Seiichiro (2000) Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment. Japanese Journal of Applied Physics, 39. 1656-1659 doi:10.1143/jjap.39.1656
 
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