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Shirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro, Kato, Takamasa, Ishida, Tetsuro (1987) 3d-Transition Metal Related Photoluminescence in In1-xGaxP Alloys. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l127

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Reference TypeJournal (article/letter/editorial)
Title3d-Transition Metal Related Photoluminescence in In1-xGaxP Alloys
JournalJapanese Journal of Applied Physics
AuthorsShirakata, ShoAuthor
Nishino, TaneoAuthor
Hamakawa, YoshihiroAuthor
Kato, TakamasaAuthor
Ishida, TetsuroAuthor
Year1987 (February 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l127Search in ResearchGate
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Mindat Ref. ID14989877Long-form Identifiermindat:1:5:14989877:7
GUID0
Full ReferenceShirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro, Kato, Takamasa, Ishida, Tetsuro (1987) 3d-Transition Metal Related Photoluminescence in In1-xGaxP Alloys. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l127
Plain TextShirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro, Kato, Takamasa, Ishida, Tetsuro (1987) 3d-Transition Metal Related Photoluminescence in In1-xGaxP Alloys. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l127
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

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Shirakata, Sho, Kondo, Masahiko, Nishino, Taneo, Hamakawa, Yoshihiro (1986) Electroreflectance and Photoluminescence Studies of In1-xGaxP1-yAsyLattice-Matched to GaAs. Japanese Journal of Applied Physics, 25. 435-439 doi:10.1143/jjap.25.435
Shirakata, Sho, Kondo, Masahiko, Tsushi, Akihito, Nishino, Taneo, Hamakawa, Yoshihiro, Kariya, Tetsuya (1985) LPE Growth of In1-xGaxP0.96As0.04on GaAs Substrate by Two-Phase Melt Method. Japanese Journal of Applied Physics, 24. 524-529 doi:10.1143/jjap.24.524
Kondo, Masahiko, Shirakata, Sho, Tsushi, Akihito, Nishino, Taneo, Hamakawa, Yoshihiro (1985) A Study on LPE Growth of In1-xGaxP1-yAsy(y≃0) on (100) GaAs Substrate. Japanese Journal of Applied Physics, 24. 806-811 doi:10.1143/jjap.24.806
Fujiwara, Yasufumi, Shirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro, Fujita, Shigeo (1986) Interface Stress at ZnSe/GaAs:Cr Heterostructure. Japanese Journal of Applied Physics, 25. 1628-1632 doi:10.1143/jjap.25.1628
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1976) Luminescence of Zn Diffused In1-xGaxP in the Direct Transition Region. Japanese Journal of Applied Physics, 15 (11) 2265-2266 doi:10.1143/jjap.15.2265
Matsumoto, Takashi, Kato, Takamasa, Ishida, Tetsuro (1976) Near-Bandgap Photoluminescence in Te-Doped In1-xGaxP ($0.2{\lesssim}x{\lesssim}0.5$) Japanese Journal of Applied Physics, 15 (8) 1491-1495 doi:10.1143/jjap.15.1491
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1980) Electrical Properties of Zn-Doped In1-xGaxP. Japanese Journal of Applied Physics, 19 (12) 2367-2375 doi:10.1143/jjap.19.2367
Matsumoto, Takashi, Kato, Takamasa, Takiguchi, Minoru, Ishida, Tetsuro (1989) Main Electron Traps in In1-xGaxP (0.12≤x≤ 0.96) Japanese Journal of Applied Physics, 28. 410-417 doi:10.1143/jjap.28.410
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1987) Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1085
Kato, Takamasa, Shimizu, Azuma, Ishida, Tetsuro (1974) Hall Mobility of Te-Doped In1-xGaxP at 300 K. Japanese Journal of Applied Physics, 13 (9) 1481-1482 doi:10.1143/jjap.13.1481
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1982) Photoluminescence Processes of Zn-Doped In1-xGaxP with 0.6Japanese Journal of Applied Physics, 21. 100-103 doi:10.1143/jjap.21.100
 
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