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Matsui, Masahiro, Oka, Satoshi, Yamagishi, Koji, Kuroiwa, Koichi, Tarui, Yasuo (1988) Photo-Process of Tantalum Oxide Films and Their Characteristics. Japanese Journal of Applied Physics, 27. 506-511 doi:10.1143/jjap.27.506

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Reference TypeJournal (article/letter/editorial)
TitlePhoto-Process of Tantalum Oxide Films and Their Characteristics
JournalJapanese Journal of Applied Physics
AuthorsMatsui, MasahiroAuthor
Oka, SatoshiAuthor
Yamagishi, KojiAuthor
Kuroiwa, KoichiAuthor
Tarui, YasuoAuthor
Year1988 (April 20)Volume27
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.27.506Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14992004Long-form Identifiermindat:1:5:14992004:1
GUID0
Full ReferenceMatsui, Masahiro, Oka, Satoshi, Yamagishi, Koji, Kuroiwa, Koichi, Tarui, Yasuo (1988) Photo-Process of Tantalum Oxide Films and Their Characteristics. Japanese Journal of Applied Physics, 27. 506-511 doi:10.1143/jjap.27.506
Plain TextMatsui, Masahiro, Oka, Satoshi, Yamagishi, Koji, Kuroiwa, Koichi, Tarui, Yasuo (1988) Photo-Process of Tantalum Oxide Films and Their Characteristics. Japanese Journal of Applied Physics, 27. 506-511 doi:10.1143/jjap.27.506
In(1988) Japanese Journal of Applied Physics Vol. 27. Japan Society of Applied Physics

See Also

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Tanimoto, Satoshi, Matsui, Masahiro, Aoyagi, Minoru, Kamisako, Koichi, Kuroiwa, Koichi, Tarui, Yasuo (1991) Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl5. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l330
Matsui, Masahiro, Nagayoshi, Hiroshi, Muto, Goro, Tanimoto, Satoshi, Kuroiwa, Koichi, Tarui, Yasuo (1990) Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators. Japanese Journal of Applied Physics, 29. 62-66 doi:10.1143/jjap.29.62
Yamagishi, Koji, Tarui, Yasuo (1986) Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic Memories. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l306
Suzuki, Kazuhiko, Kuroiwa, Koichi, Tarui, Yasuo (1988) Phosphorus Doping Properties of Hydrogenated Amorphous Silicon Prepared by Mercury Sensitized Photo-CVD. Japanese Journal of Applied Physics, 27. 2032-2036 doi:10.1143/jjap.27.2032
Mizukawa, Satoshi, Sato, Katsuaki, Yasuhiro, Kazumichi, Isawa, Mikio, Kuroiwa, Koichi, Tarui, Yasuo (1989) Optical Studies of Doping-Characteristics in Boron-Doped a-Si:H Films Prepared by the Photo-CVD Technique. Japanese Journal of Applied Physics, 28. 961-964 doi:10.1143/jjap.28.961
Koyama, Hiroyuki, Tanimoto, Satoshi, Kuroiwa, Koichi, Tarui, Yasuo (1994) Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide. Japanese Journal of Applied Physics, 33. 6291-6298 doi:10.1143/jjap.33.6291
Tabuchi, Toshiya, Yamagishi, Koji, Tarui, Yasuo (1987) Low-Temperature Growth of Transparent and Conducting Tin Oxide Film by Photo-Chemical Vapor Deposition. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l186
Shichi, Yushi, Tanimoto, Satoshi, Goto, Takaaki, Kuroiwa, Koichi, Tarui, Yasuo (1994) Interaction ofPbTiO3Films with Si Substrate. Japanese Journal of Applied Physics, 33. 5172-5177 doi:10.1143/jjap.33.5172
Suzuki, Kazuhiko, Yukawa, Yohsuke, Takao, Hiroaki, Kuroiwa, Koichi, Tarui, Yasuo (1986) Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l811
Kawasaki, Satoshi, Sato, Katsuaki, Suzuki, Kazuhiko, Takeuchi, Hiroshi, Kuroiwa, Koichi, Tarui, Yasuo (1987) Optical Characterization of Undoped a-Si:H Prepared by Photo-CVD and GD Techniques. Japanese Journal of Applied Physics, 26. 1400-1403 doi:10.1143/jjap.26.1400
Suzuki, Kazuhiko, Kominato, Toshimi, Takeuchi, Hiroshi, Kuroiwa, Koichi, Tarui, Yasuo (1987) Doping-Induced Defects in P-Doped Photo-CVD a-Si:H. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l902
 
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