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Kobayashi, Yasufumi, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1991) Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1781

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Reference TypeJournal (article/letter/editorial)
TitleSelective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
JournalJapanese Journal of Applied Physics
AuthorsKobayashi, YasufumiAuthor
Egawa, TakashiAuthor
Jimbo, TakashiAuthor
Umeno, MasayoshiAuthor
Year1991 (October 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1781Search in ResearchGate
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Mindat Ref. ID14996894Long-form Identifiermindat:1:5:14996894:4
GUID0
Full ReferenceKobayashi, Yasufumi, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1991) Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1781
Plain TextKobayashi, Yasufumi, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1991) Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1781
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Kazi, Zaman Iqbal, Thilakan, Periyasamy, Egawa, Takashi, Umeno, Masayoshi, Jimbo, Takashi (2001) Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 40. 4903-4906 doi:10.1143/jjap.40.4903
Hasegawa, Yoshiaki, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1996) Suppression of<100>Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates. Japanese Journal of Applied Physics, 35. 5637-5641 doi:10.1143/jjap.35.5637
Egawa, Takashi, Kobayashi, Yasufumi, Hayashi, Yasuhiko, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1990) Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1133
Hasegawa, Yoshiaki, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1993) Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l997
Egawa, Takashi, Hasegawa, Yoshiaki, Jimbo, Takashi, Umeno, Masayoshi (1992) Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 31. 791-797 doi:10.1143/jjap.31.791
Soga, Tetsuo, George, Thomas, Jimbo, Takashi, Umeno, Masayoshi (1991) Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. 3471-3474 doi:10.1143/jjap.30.3471
Murata, Yoshihiko, Nakanishi, Naoki, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1996) GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l1631
Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1994) Minority Carrier Properties of GaAs on Si Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 33. 1494-1498 doi:10.1143/jjap.33.1494
Shimizu, Hiroaki, Egawa, Takashi, Soga, Tetsuo, JIMBO, Takashi, Umeno, Masayoshi (1992) First Demonstration of AlxGa1-xAs/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1150
Egawa, Takashi, Nozaki, Shinji, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1990) Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO2Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2417
Egawa, Takashi, Ogawa, Akira, Jimbo, Takashi, Umeno, Masayoshi (1998) AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy. Japanese Journal of Applied Physics, 37. 1552-1555 doi:10.1143/jjap.37.1552
 
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