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Kim, Kwang Woong, Cho, Nam Ki, Ryu, Sung Phil, Song, Jin Dong, Choi, Won Jun, Lee, Jung Il, Park, Jung Ho (2006) InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy. Japanese Journal of Applied Physics, 45 (10) 8010-8013 doi:10.1143/jjap.45.8010

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Reference TypeJournal (article/letter/editorial)
TitleInAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
JournalJapanese Journal of Applied Physics
AuthorsKim, Kwang WoongAuthor
Cho, Nam KiAuthor
Ryu, Sung PhilAuthor
Song, Jin DongAuthor
Choi, Won JunAuthor
Lee, Jung IlAuthor
Park, Jung HoAuthor
Year2006 (October 6)Volume45
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.8010Search in ResearchGate
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Mindat Ref. ID15027095Long-form Identifiermindat:1:5:15027095:1
GUID0
Full ReferenceKim, Kwang Woong, Cho, Nam Ki, Ryu, Sung Phil, Song, Jin Dong, Choi, Won Jun, Lee, Jung Il, Park, Jung Ho (2006) InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy. Japanese Journal of Applied Physics, 45 (10) 8010-8013 doi:10.1143/jjap.45.8010
Plain TextKim, Kwang Woong, Cho, Nam Ki, Ryu, Sung Phil, Song, Jin Dong, Choi, Won Jun, Lee, Jung Il, Park, Jung Ho (2006) InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy. Japanese Journal of Applied Physics, 45 (10) 8010-8013 doi:10.1143/jjap.45.8010
In(2006, October) Japanese Journal of Applied Physics Vol. 45 (10) Japan Society of Applied Physics


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