Xu, Zhengtao, Mitzi, David B. (2003) [CH3(CH2)11NH3]SnI3: A Hybrid Semiconductor with MoO3-type Tin(II) Iodide Layers. Inorganic Chemistry, 42 (21) 6589-6591 doi:10.1021/ic0347081
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | [CH3(CH2)11NH3]SnI3: A Hybrid Semiconductor with MoO3-type Tin(II) Iodide Layers | ||
Journal | Inorganic Chemistry | ||
Authors | Xu, Zhengtao | Author | |
Mitzi, David B. | Author | ||
Year | 2003 (October) | Volume | 42 |
Issue | 21 | ||
Publisher | American Chemical Society (ACS) | ||
DOI | doi:10.1021/ic0347081Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 1503456 | Long-form Identifier | mindat:1:5:1503456:4 |
GUID | 0 | ||
Full Reference | Xu, Zhengtao, Mitzi, David B. (2003) [CH3(CH2)11NH3]SnI3: A Hybrid Semiconductor with MoO3-type Tin(II) Iodide Layers. Inorganic Chemistry, 42 (21) 6589-6591 doi:10.1021/ic0347081 | ||
Plain Text | Xu, Zhengtao, Mitzi, David B. (2003) [CH3(CH2)11NH3]SnI3: A Hybrid Semiconductor with MoO3-type Tin(II) Iodide Layers. Inorganic Chemistry, 42 (21) 6589-6591 doi:10.1021/ic0347081 | ||
In | (2003, October) Inorganic Chemistry Vol. 42 (21) American Chemical Society (ACS) |
See Also
These are possibly similar items as determined by title/reference text matching only.