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Lee, Hojin, Jung, Hyunseung, Choi, Keun-Yeong, Kanicki, Jerzy (2011) Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors. Japanese Journal of Applied Physics, 50. 120203 doi:10.1143/jjap.50.120203

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Reference TypeJournal (article/letter/editorial)
TitleElectrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors
JournalJapanese Journal of Applied Physics
AuthorsLee, HojinAuthor
Jung, HyunseungAuthor
Choi, Keun-YeongAuthor
Kanicki, JerzyAuthor
Year2011 (November 21)Volume50
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.120203Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15036645Long-form Identifiermindat:1:5:15036645:6
GUID0
Full ReferenceLee, Hojin, Jung, Hyunseung, Choi, Keun-Yeong, Kanicki, Jerzy (2011) Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors. Japanese Journal of Applied Physics, 50. 120203 doi:10.1143/jjap.50.120203
Plain TextLee, Hojin, Jung, Hyunseung, Choi, Keun-Yeong, Kanicki, Jerzy (2011) Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors. Japanese Journal of Applied Physics, 50. 120203 doi:10.1143/jjap.50.120203
In(2011) Japanese Journal of Applied Physics Vol. 50. Japan Society of Applied Physics

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Lee, Hojin, Jung, Hyunseung, Choi, Keun-Yeong, Kanicki, Jerzy (2011) Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors. Japanese Journal of Applied Physics, 50 (12) 120203 doi:10.7567/jjap.50.120203
Lee, Hojin, Liu, Che-Hung, Kanicki, Jerzy (2011) Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays. Japanese Journal of Applied Physics, 50 (7) 74203 doi:10.1143/jjap.50.074203
Lee, Hojin, Liu, Che-Hung, Kanicki, Jerzy (2011) Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays. Japanese Journal of Applied Physics, 50 (7) 74203 doi:10.7567/jjap.50.074203
Chiang, Chun-sung, Kanicki, Jerzy, Takechi, Kazushige (1998) Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays. Japanese Journal of Applied Physics, 37. 4704-4710 doi:10.1143/jjap.37.4704
Lee, Hojin, Yoo, Juhn S., Kim, Chang-Dong, Chung, In-Jae, Kanicki, Jerzy (2007) Novel Current-Scaling Current-Mirror Hydrogenated Amorphous Silicon Thin-Film Transistor Pixel Electrode Circuit with Cascade Capacitor for Active-Matrix Organic Light-Emitting Devices. Japanese Journal of Applied Physics, 46 (3) 1343-1349 doi:10.1143/jjap.46.1343
Lustig, Naftali, Kanicki, Jerzy (1989) Gate dielectric and contact effects in hydrogenated amorphous siliconā€silicon nitride thinā€film transistors. Journal of Applied Physics, 65 (10). 3951-3957 doi:10.1063/1.343361
Kuo, Alex, Won, Tae Kyung, Kanicki, Jerzy (2008) Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance. Japanese Journal of Applied Physics, 47 (5) 3362-3367 doi:10.1143/jjap.47.3362
Chiang, Chun-sung, Martin, Sandrine, Kanicki, Jerzy, Ugai, Yasuhiro, Yukawa, Teizo, Takeuchi, Shu (1998) Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects. Japanese Journal of Applied Physics, 37. 5914-5920 doi:10.1143/jjap.37.5914
Chen, Chao-Nan, Su, Kuo-Hui, Chen, Yeong-Chin (2011) Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors. Japanese Journal of Applied Physics, 50 (6) 66501 doi:10.1143/jjap.50.066501
Liao, Wen-Shiang, Lee, Si-Chen (1997) Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors. Japanese Journal of Applied Physics, 36. 2073-2076 doi:10.1143/jjap.36.2073
Martin, Sandrine, Chiang, Chun-Sung, Nahm, Jeong-Yeop, Li, Tong, Kanicki, Jerzy, Ugai, Yasuhiro (2001) Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances. Japanese Journal of Applied Physics, 40. 530-537 doi:10.1143/jjap.40.530
 
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