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Lee, Joung-Eob, Kim, Garam, Kim, Kyung-Wan, Lee, Jung-Han, Kang, Kwon-Chil, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook (2011) Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors. Japanese Journal of Applied Physics, 50 (7) 74101 doi:10.1143/jjap.50.074101

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Reference TypeJournal (article/letter/editorial)
TitleDynamic Driving Current Using Side Gate Bias of Single-Electron Transistors
JournalJapanese Journal of Applied Physics
AuthorsLee, Joung-EobAuthor
Kim, GaramAuthor
Kim, Kyung-WanAuthor
Lee, Jung-HanAuthor
Kang, Kwon-ChilAuthor
Lee, Jong-HoAuthor
Shin, HyungcheolAuthor
Park, Byung-GookAuthor
Year2011 (July 20)Volume50
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.074101Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15038861Long-form Identifiermindat:1:5:15038861:8
GUID0
Full ReferenceLee, Joung-Eob, Kim, Garam, Kim, Kyung-Wan, Lee, Jung-Han, Kang, Kwon-Chil, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook (2011) Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors. Japanese Journal of Applied Physics, 50 (7) 74101 doi:10.1143/jjap.50.074101
Plain TextLee, Joung-Eob, Kim, Garam, Kim, Kyung-Wan, Lee, Jung-Han, Kang, Kwon-Chil, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook (2011) Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors. Japanese Journal of Applied Physics, 50 (7) 74101 doi:10.1143/jjap.50.074101
In(2011, July) Japanese Journal of Applied Physics Vol. 50 (7) Japan Society of Applied Physics


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