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Han, Sang-Heon, Lee, Dong-Yul, Lim, Jin-Young, Lee, Jeong Wook, Kim, Dong-Joon, Kim, Young Sun, Kim, Sung-Tae, Park, Seong-Ju (2012) Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop. Japanese Journal of Applied Physics, 51. 100201 doi:10.1143/jjap.51.100201

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
JournalJapanese Journal of Applied Physics
AuthorsHan, Sang-HeonAuthor
Lee, Dong-YulAuthor
Lim, Jin-YoungAuthor
Lee, Jeong WookAuthor
Kim, Dong-JoonAuthor
Kim, Young SunAuthor
Kim, Sung-TaeAuthor
Park, Seong-JuAuthor
Year2012 (September 19)Volume51
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.100201Search in ResearchGate
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Mindat Ref. ID15041005Long-form Identifiermindat:1:5:15041005:0
GUID0
Full ReferenceHan, Sang-Heon, Lee, Dong-Yul, Lim, Jin-Young, Lee, Jeong Wook, Kim, Dong-Joon, Kim, Young Sun, Kim, Sung-Tae, Park, Seong-Ju (2012) Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop. Japanese Journal of Applied Physics, 51. 100201 doi:10.1143/jjap.51.100201
Plain TextHan, Sang-Heon, Lee, Dong-Yul, Lim, Jin-Young, Lee, Jeong Wook, Kim, Dong-Joon, Kim, Young Sun, Kim, Sung-Tae, Park, Seong-Ju (2012) Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop. Japanese Journal of Applied Physics, 51. 100201 doi:10.1143/jjap.51.100201
In(2012) Japanese Journal of Applied Physics Vol. 51. Japan Society of Applied Physics

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Han, Sang-Heon, Lee, Dong-Yul, Lim, Jin-Young, Lee, Jeong Wook, Kim, Dong-Joon, Kim, Young Sun, Kim, Sung-Tae, Park, Seong-Ju (2012) Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop. Japanese Journal of Applied Physics, 51 (10) 100201 doi:10.7567/jjap.51.100201
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Kim, Sang-Jo, Lee, Kwang Jae, Park, Seong-Ju (2018) Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers. Journal of Physics D: Applied Physics, 51. 25pp. doi:10.1088/1361-6463/aac56c
Huh, Chul, Lee, Ji-Myon, Kim, Dong-Joon, Park, Seong-Ju (2002) Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer. Journal of Applied Physics, 92 (5). 2248-2250 doi:10.1063/1.1497467
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Kim, Hyunsoo, Kim, Dong-Joon, Park, Seong-Ju, Hwang, Hyunsang (2001) Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes. Journal of Applied Physics, 89 (2). 1506-1508 doi:10.1063/1.1334631
 
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