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Kusumandari, Kusumandari, Takeuchi, Wakana, Kato, Kimihiko, Shibayama, Shigehisa, Sakashita, Mitsuo, Nakatsuka, Osamu, Zaima, Shigeaki (2012) Characterization of Damage of Al$_{2}$O$_{3}$/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01aj01

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of Damage of Al$_{2}$O$_{3}$/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation
JournalJapanese Journal of Applied Physics
AuthorsKusumandari, KusumandariAuthor
Takeuchi, WakanaAuthor
Kato, KimihikoAuthor
Shibayama, ShigehisaAuthor
Sakashita, MitsuoAuthor
Nakatsuka, OsamuAuthor
Zaima, ShigeakiAuthor
Year2012 (January 20)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.01aj01Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15041500Long-form Identifiermindat:1:5:15041500:0
GUID0
Full ReferenceKusumandari, Kusumandari, Takeuchi, Wakana, Kato, Kimihiko, Shibayama, Shigehisa, Sakashita, Mitsuo, Nakatsuka, Osamu, Zaima, Shigeaki (2012) Characterization of Damage of Al$_{2}$O$_{3}$/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01aj01
Plain TextKusumandari, Kusumandari, Takeuchi, Wakana, Kato, Kimihiko, Shibayama, Shigehisa, Sakashita, Mitsuo, Nakatsuka, Osamu, Zaima, Shigeaki (2012) Characterization of Damage of Al$_{2}$O$_{3}$/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01aj01
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics


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