Amilusik, M., Sochacki, T., Fijalkowski, M., Lucznik, B., Iwinska, M., Sidor, A., Teisseyre, H., Domagała, J., Grzegory, I., Bockowski, M. (2019) Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab1065
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds | ||
Journal | Japanese Journal of Applied Physics | ||
Authors | Amilusik, M. | Author | |
Sochacki, T. | Author | ||
Fijalkowski, M. | Author | ||
Lucznik, B. | Author | ||
Iwinska, M. | Author | ||
Sidor, A. | Author | ||
Teisseyre, H. | Author | ||
Domagała, J. | Author | ||
Grzegory, I. | Author | ||
Bockowski, M. | Author | ||
Year | 2019 (June 1) | Volume | 58 |
Publisher | Japan Society of Applied Physics | ||
DOI | doi:10.7567/1347-4065/ab1065Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 15050002 | Long-form Identifier | mindat:1:5:15050002:7 |
GUID | 0 | ||
Full Reference | Amilusik, M., Sochacki, T., Fijalkowski, M., Lucznik, B., Iwinska, M., Sidor, A., Teisseyre, H., Domagała, J., Grzegory, I., Bockowski, M. (2019) Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab1065 | ||
Plain Text | Amilusik, M., Sochacki, T., Fijalkowski, M., Lucznik, B., Iwinska, M., Sidor, A., Teisseyre, H., Domagała, J., Grzegory, I., Bockowski, M. (2019) Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab1065 | ||
In | (2019) Japanese Journal of Applied Physics Vol. 58. Japan Society of Applied Physics |
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