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Fukushima, Hayata, Usami, Shigeyoshi, Ogura, Masaya, Ando, Yuto, Tanaka, Atsushi, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi (2019) Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab106c

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Reference TypeJournal (article/letter/editorial)
TitleDeeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
JournalJapanese Journal of Applied Physics
AuthorsFukushima, HayataAuthor
Usami, ShigeyoshiAuthor
Ogura, MasayaAuthor
Ando, YutoAuthor
Tanaka, AtsushiAuthor
Deki, ManatoAuthor
Kushimoto, MakiAuthor
Nitta, ShugoAuthor
Honda, YoshioAuthor
Amano, HiroshiAuthor
Year2019 (June 1)Volume58
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/1347-4065/ab106cSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID15050009Long-form Identifiermindat:1:5:15050009:6
GUID0
Full ReferenceFukushima, Hayata, Usami, Shigeyoshi, Ogura, Masaya, Ando, Yuto, Tanaka, Atsushi, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi (2019) Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab106c
Plain TextFukushima, Hayata, Usami, Shigeyoshi, Ogura, Masaya, Ando, Yuto, Tanaka, Atsushi, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi (2019) Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab106c
In(2019) Japanese Journal of Applied Physics Vol. 58. Japan Society of Applied Physics

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Usami, Shigeyoshi, Tanaka, Atsushi, Fukushima, Hayata, Ando, Yuto, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi (2019) Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab1250
Usami, Shigeyoshi, Ando, Yuto, Tanaka, Atsushi, Nagamatsu, Kentaro, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Sugawara, Yoshihiro, Yao, Yong-Zhao, Ishikawa, Yukari (2018) Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate. Applied Physics Letters, 112 (18). 182106pp. doi:10.1063/1.5024704
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Kumabe, Takeru, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi (2021) Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese Journal of Applied Physics, 60. doi:10.35848/1347-4065/abd538
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Liu, Zhibin, Nitta, Shugo, Usami, Shigeyoshi, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi (2019) Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 509. 50-53 doi:10.1016/j.jcrysgro.2018.12.007
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