Xu, S., Zhang, S., Kirch, J. D., Suri, S., Pokharel, N., Gao, H., Kim, H., Dhingra, P., Lee, M. L., Botez, D., Mawst, L. J. (2022) ∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition. Applied Physics Letters, 121 (17) 171103 doi:10.1063/5.0122272

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Reference Type	Journal (article/letter/editorial)
Title	∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition
Journal	Applied Physics Letters
Authors	Xu, S.		Author
	Zhang, S.		Author
	Kirch, J. D.		Author
	Suri, S.		Author
	Pokharel, N.		Author
	Gao, H.		Author
	Kim, H.		Author
	Dhingra, P.		Author
	Lee, M. L.		Author
	Botez, D.		Author
	Mawst, L. J.		Author
Year	2022 (October 24)	Volume	121
Issue	17
Publisher	AIP Publishing
DOI	doi:10.1063/5.0122272Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	15480914	Long-form Identifier	mindat:1:5:15480914:0
GUID	0
Full Reference	Xu, S., Zhang, S., Kirch, J. D., Suri, S., Pokharel, N., Gao, H., Kim, H., Dhingra, P., Lee, M. L., Botez, D., Mawst, L. J. (2022) ∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition. Applied Physics Letters, 121 (17) 171103 doi:10.1063/5.0122272
Plain Text	Xu, S., Zhang, S., Kirch, J. D., Suri, S., Pokharel, N., Gao, H., Kim, H., Dhingra, P., Lee, M. L., Botez, D., Mawst, L. J. (2022) ∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition. Applied Physics Letters, 121 (17) 171103 doi:10.1063/5.0122272
In	(2022, October) Applied Physics Letters Vol. 121 (17) AIP Publishing

	Xu, S., Zhang, S., Kirch, J. D., Gao, H., Wang, Y., Lee, M. L., Tatavarti, S. R., Botez, D., Mawst, L. J. (2023) 8.1 μ m-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition. Applied Physics Letters, 123 (3) AIP Publishing. doi:10.1063/5.0155202
	Shin, J. C., D’Souza, M., Liu, Z., Kirch, J., Mawst, L. J., Botez, D., Vurgaftman, I., Meyer, J. R. (2009) Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers. Applied Physics Letters, 94 (20). 201103pp. doi:10.1063/1.3139069
	Kirch, J. D., Kim, H., Boyle, C., Chang, C.-C., Mawst, L. J., Lindberg, D., Earles, T., Botez, D., Helm, M., von Borany, J., Akhmadaliev, S., Böttger, R., Reyner, C. (2017) Proton implantation for electrical insulation of the InGaAs/InAlAs superlattice material used in 8–15 μm-emitting quantum cascade lasers. Applied Physics Letters, 110 (8). 82102pp. doi:10.1063/1.4977067
	Kirch, J. D., Chang, C.-C., Boyle, C., Mawst, L. J., Lindberg, D., Earles, T., Botez, D. (2015) Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers. Applied Physics Letters, 106 (15). 151106pp. doi:10.1063/1.4917499
	Hu, Y., Suri, S., Kirch, J., Knipfer, B., Jacobs, S., Nair, S. K., Zhou, Z., Yu, Z., Botez, D., Mawst, L. J. (2024) Large-scale data generation for quantum cascade laser active-region design with automated wavefunction identification. Applied Physics Letters, 124 (24) doi:10.1063/5.0209613
	Sigler, C., Kirch, J. D., Earles, T., Mawst, L. J., Yu, Z., Botez, D. (2014) Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes. Applied Physics Letters, 104 (13). 131108pp. doi:10.1063/1.4869561
	Lane, B., Wu, D., Rybaltowski, A., Yi, H., Diaz, J., Razeghi, M. (1997) Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition. Applied Physics Letters, 70 (4). 443-445 doi:10.1063/1.118176
	Botez, D., Kumar, S., Shin, J. C., Mawst, L. J., Vurgaftman, I., Meyer, J. R. (2010) Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers. Applied Physics Letters, 97 (7). 71101pp. doi:10.1063/1.3478836
	Xu, Shining, Zhang, Shuqi, Gao, Huilong, Kirch, Jeremy, Botez, Dan, Mawst, Luke (2023) Strain-balanced InGaAs/AlInAs/InP quantum cascade laser grown on GaAs by MOVPE. Journal of Crystal Growth, 619. 127310 doi:10.1016/j.jcrysgro.2023.127310
	Xu, W. Z., Ye, Z. Z., Zeng, Y. J., Zhu, L. P., Zhao, B. H., Jiang, L., Lu, J. G., He, H. P., Zhang, S. B. (2006) ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition. Applied Physics Letters, 88 (17). 173506pp. doi:10.1063/1.2199588
	Boyle, C., Sigler, C., Kirch, J. D., Lindberg, D. F., Earles, T., Botez, D., Mawst, L. J. (2016) High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode. Applied Physics Letters, 108 (12). 121107pp. doi:10.1063/1.4944846

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