Yan, Hui-Hui, Fu, Yan-Long, Cheng, Wei, Zhang, Feng-Shou (2023) Electronic properties of defects induced by hydrogen and helium radiation on semimetal M o T e 2 . Chemical Physics, 565. 111764 doi:10.1016/j.chemphys.2022.111764
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Electronic properties of defects induced by hydrogen and helium radiation on semimetal | ||
Journal | Chemical Physics | ||
Authors | Yan, Hui-Hui | Author | |
Fu, Yan-Long | Author | ||
Cheng, Wei | Author | ||
Zhang, Feng-Shou | Author | ||
Year | 2023 (January) | Volume | 565 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.chemphys.2022.111764Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 15513000 | Long-form Identifier | mindat:1:5:15513000:7 |
GUID | 0 | ||
Full Reference | Yan, Hui-Hui, Fu, Yan-Long, Cheng, Wei, Zhang, Feng-Shou (2023) Electronic properties of defects induced by hydrogen and helium radiation on semimetal | ||
Plain Text | Yan, Hui-Hui, Fu, Yan-Long, Cheng, Wei, Zhang, Feng-Shou (2023) Electronic properties of defects induced by hydrogen and helium radiation on semimetal MoTe2. Chemical Physics, 565. 111764 doi:10.1016/j.chemphys.2022.111764 | ||
In | (2023) Chemical Physics Vol. 565. Elsevier BV |
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