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Liu, Nanliu, Jiang, Yongjing, Xiao, Jian, Liang, Zhiwen, Wang, Qi, Zhang, Guoyi (2021) Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE. Frontiers in Chemistry, 9. doi:10.3389/fchem.2021.671720

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE
JournalFrontiers in Chemistry
AuthorsLiu, NanliuAuthor
Jiang, YongjingAuthor
Xiao, JianAuthor
Liang, ZhiwenAuthor
Wang, QiAuthor
Zhang, GuoyiAuthor
Year2021 (April 22)Volume9
PublisherFrontiers Media SA
DOIdoi:10.3389/fchem.2021.671720Search in ResearchGate
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Mindat Ref. ID15661670Long-form Identifiermindat:1:5:15661670:8
GUID0
Full ReferenceLiu, Nanliu, Jiang, Yongjing, Xiao, Jian, Liang, Zhiwen, Wang, Qi, Zhang, Guoyi (2021) Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE. Frontiers in Chemistry, 9. doi:10.3389/fchem.2021.671720
Plain TextLiu, Nanliu, Jiang, Yongjing, Xiao, Jian, Liang, Zhiwen, Wang, Qi, Zhang, Guoyi (2021) Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE. Frontiers in Chemistry, 9. doi:10.3389/fchem.2021.671720
In(2022) Frontiers in Chemistry Vol. 9. Frontiers Media SA

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