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Lin, Ruobing, Zhao, Dongyang, Zhang, Jiyue, Cao, Hechun, Zeng, Jinhua, Wang, Xudong, Bai, Wei, Yang, Jing, Zhang, Yuanyuan, Tang, Xiaodong, Chen, Yan, Wang, Jianlu, Chu, Junhao (2023) Thickness-dependent semimetal-to-semiconductor transition in two-dimensional GaGeTe. Journal of Applied Physics, 133 (2) 24304 doi:10.1063/5.0129453

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Reference TypeJournal (article/letter/editorial)
TitleThickness-dependent semimetal-to-semiconductor transition in two-dimensional GaGeTe
JournalJournal of Applied Physics
AuthorsLin, RuobingAuthor
Zhao, DongyangAuthor
Zhang, JiyueAuthor
Cao, HechunAuthor
Zeng, JinhuaAuthor
Wang, XudongAuthor
Bai, WeiAuthor
Yang, JingAuthor
Zhang, YuanyuanAuthor
Tang, XiaodongAuthor
Chen, YanAuthor
Wang, JianluAuthor
Chu, JunhaoAuthor
Year2023 (January 14)Volume133
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/5.0129453Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15662915Long-form Identifiermindat:1:5:15662915:9
GUID0
Full ReferenceLin, Ruobing, Zhao, Dongyang, Zhang, Jiyue, Cao, Hechun, Zeng, Jinhua, Wang, Xudong, Bai, Wei, Yang, Jing, Zhang, Yuanyuan, Tang, Xiaodong, Chen, Yan, Wang, Jianlu, Chu, Junhao (2023) Thickness-dependent semimetal-to-semiconductor transition in two-dimensional GaGeTe. Journal of Applied Physics, 133 (2) 24304 doi:10.1063/5.0129453
Plain TextLin, Ruobing, Zhao, Dongyang, Zhang, Jiyue, Cao, Hechun, Zeng, Jinhua, Wang, Xudong, Bai, Wei, Yang, Jing, Zhang, Yuanyuan, Tang, Xiaodong, Chen, Yan, Wang, Jianlu, Chu, Junhao (2023) Thickness-dependent semimetal-to-semiconductor transition in two-dimensional GaGeTe. Journal of Applied Physics, 133 (2) 24304 doi:10.1063/5.0129453
In(2023, January) Journal of Applied Physics Vol. 133 (2) AIP Publishing


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