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Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Stepanoff, Sergei, Haque, Aman, Wolfe, Douglas E., Ren, Fan, Pearton, S. J. (2023) Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers. Journal of Applied Physics, 133 (1) 15702 doi:10.1063/5.0134823

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Reference TypeJournal (article/letter/editorial)
TitleReversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers
JournalJournal of Applied Physics
AuthorsLi, Jian-SianAuthor
Chiang, Chao-ChingAuthor
Xia, XinyiAuthor
Stepanoff, SergeiAuthor
Haque, AmanAuthor
Wolfe, Douglas E.Author
Ren, FanAuthor
Pearton, S. J.Author
Year2023 (January 7)Volume133
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/5.0134823Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15662959Long-form Identifiermindat:1:5:15662959:3
GUID0
Full ReferenceLi, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Stepanoff, Sergei, Haque, Aman, Wolfe, Douglas E., Ren, Fan, Pearton, S. J. (2023) Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers. Journal of Applied Physics, 133 (1) 15702 doi:10.1063/5.0134823
Plain TextLi, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Stepanoff, Sergei, Haque, Aman, Wolfe, Douglas E., Ren, Fan, Pearton, S. J. (2023) Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers. Journal of Applied Physics, 133 (1) 15702 doi:10.1063/5.0134823
In(2023, January) Journal of Applied Physics Vol. 133 (1) AIP Publishing

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