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Kaneko, Masahiro, Nishinaka, Hiroyuki, Kanegae, Kazutaka, Yoshimoto, Masahiro (2023) Coherent growth of β-(Al x Ga1−x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD. Japanese Journal of Applied Physics, 62. doi:10.35848/1347-4065/acb065

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Reference TypeJournal (article/letter/editorial)
TitleCoherent growth of β-(Al x Ga1−x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD
JournalJapanese Journal of Applied Physics
AuthorsKaneko, MasahiroAuthor
Nishinaka, HiroyukiAuthor
Kanegae, KazutakaAuthor
Yoshimoto, MasahiroAuthor
Year2023 (June 1)Volume62
PublisherIOP Publishing
DOIdoi:10.35848/1347-4065/acb065Search in ResearchGate
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Mindat Ref. ID15690910Long-form Identifiermindat:1:5:15690910:7
GUID0
Full ReferenceKaneko, Masahiro, Nishinaka, Hiroyuki, Kanegae, Kazutaka, Yoshimoto, Masahiro (2023) Coherent growth of β-(Al x Ga1−x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD. Japanese Journal of Applied Physics, 62. doi:10.35848/1347-4065/acb065
Plain TextKaneko, Masahiro, Nishinaka, Hiroyuki, Kanegae, Kazutaka, Yoshimoto, Masahiro (2023) Coherent growth of β-(Al x Ga1−x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD. Japanese Journal of Applied Physics, 62. doi:10.35848/1347-4065/acb065
In(2023) Japanese Journal of Applied Physics Vol. 62. Japan Society of Applied Physics

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Kaneko, Masahiro, Miyake, Hiroki, Nishinaka, Hiroyuki (2024) Demonstration of β-(Al x Ga1−x )2O3/β-Ga2O3 superlattice growth by mist chemical vapor deposition. Japanese Journal of Applied Physics, 63 (9). doi:10.35848/1347-4065/ad6f87
Ogawa, Temma, Nishinaka, Hiroyuki, Shimazoe, Kazuki, Nagaoka, Tatsuji, Miyake, Hiroki, Kanegae, Kazutaka, Yoshimoto, Masahiro (2023) Homoepitaxial growth of Ge doped β-gallium oxide thin films by mist chemical vapor deposition. Japanese Journal of Applied Physics, 62. doi:10.35848/1347-4065/acba25
Ueda, Osamu, Nishinaka, Hiroyuki, Ikenaga, Noriaki, Hasuike, Noriyuki, Yoshimoto, Masahiro (2023) TEM characterization of defects in κ-(In x Ga1−x )2O3 thin film grown on (001) FZ-grown ε-GaFeO3 substrate by mist CVD. Japanese Journal of Applied Physics, 62 (12) 125501 doi:10.35848/1347-4065/ad07fb
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Hasegawa, Sho, Hasuike, Noriyuki, Kanegae, Kazutaka, Nishinaka, Hiroyuki, Yoshimoto, Masahiro (2023) Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode. Japanese Journal of Applied Physics, 62 (1) 11003 doi:10.35848/1347-4065/acb2a4
Isomura, Noritake, Nagaoka, Tatsuji, Watanabe, Yukihiko, Kutsuki, Katsuhiro, Nishinaka, Hiroyuki, Yoshimoto, Masahiro (2020) Determination of Zn-containing sites in β-Ga2O3 film grown through mist chemical vapor deposition via X-ray absorption spectroscopy. Japanese Journal of Applied Physics, 59 (7) 70909 doi:10.35848/1347-4065/ab9fdf
Ogura, Yuri, Arata, Yuta, Nishinaka, Hiroyuki, Yoshimoto, Masahiro (2022) Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition. Japanese Journal of Applied Physics, 61. doi:10.35848/1347-4065/ac4688
Fujiwara, Yuki, Tahara, Daisuke, Nishinaka, Hiroyuki, Yoshimoto, Masahiro, Noda, Minoru (2020) A preliminary study on mist CVD-derived ferroelectric Hf1−x Zr x O2 films featuring its possibility of suitable operation for non-volatile analog memory. Japanese Journal of Applied Physics, 59. doi:10.35848/1347-4065/abad18
Nishinaka, Hiroyuki, Shimazoe, Kazuki, Kanegae, Kazutaka, Yoshimoto, Masahiro (2023) Corundum-structured α-Fe2O3 substrates for α-Ga2O3 epitaxial growth. Materials Letters, 336. 133784 doi:10.1016/j.matlet.2022.133784
Horie, Ryuto, Nishinaka, Hiroyuki, Tahara, Daisuke, Yoshimoto, Masahiro (2021) Epitaxial growth of γ-(AlxGa1-x)2O3 alloy thin films on spinel substrates via mist chemical vapor deposition. Journal of Alloys and Compounds, 851. 156927pp. doi:10.1016/j.jallcom.2020.156927
Alema, Fikadu, Itoh, Takeki, Vogt, Samuel, Speck, James S., Osinsky, Andrei (2022) Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD. Japanese Journal of Applied Physics, 61 (10) 100903 doi:10.35848/1347-4065/ac8bbc
 
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