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Hofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R. (2023) Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**. Angewandte Chemie, 135 (7) doi:10.1002/ange.202213982

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Reference TypeJournal (article/letter/editorial)
TitleRoom Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**
JournalAngewandte Chemie
AuthorsHofmann, Emily V. S.Author
Stock, Taylor J. Z.Author
Warschkow, OliverAuthor
Conybeare, RebeccaAuthor
Curson, Neil J.Author
Schofield, Steven R.Author
Year2023 (February 6)Volume135
Issue7
PublisherWiley
DOIdoi:10.1002/ange.202213982Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15697741Long-form Identifiermindat:1:5:15697741:0
GUID0
Full ReferenceHofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R. (2023) Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**. Angewandte Chemie, 135 (7) doi:10.1002/ange.202213982
Plain TextHofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R. (2023) Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**. Angewandte Chemie, 135 (7) doi:10.1002/ange.202213982
In(2023, February) Angewandte Chemie Vol. 135 (7) Wiley

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Hofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R. (2023) Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**. Angewandte Chemie International Edition, 62 (7) doi:10.1002/anie.202213982
Lundgren, Eric A. S., Conybeare, Rebecca, Stock, Taylor J. Z., Curson, Neil J., Warschkow, Oliver, Schofield, Steven R. (2023) Bismuth trichloride as a molecular precursor for silicon doping. Applied Physics Letters, 122 (15) 151601 doi:10.1063/5.0145772
Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Bowler, David R., Schofield, Steven R., Curson, Neil J. (2024) Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication. Advanced Materials, 36 (24) doi:10.1002/adma.202312282
Lundgren, Eric A. S., Byron, Carly, Constantinou, Procopios, Stock, Taylor J. Z., Curson, Neil J., Thomsen, Lars, Warschkow, Oliver, Teplyakov, Andrew V., Schofield, Steven R. (2023) Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001) The Journal of Physical Chemistry C, 127 (33) 16433-16441 doi:10.1021/acs.jpcc.3c03916
Hofmann, Emily V.S., Scalise, Emilio, Montalenti, Francesco, Stock, Taylor J.Z., Schofield, Steven R., Capellini, Giovanni, Miglio, Leo, Curson, Neil J., Klesse, Wolfgang M. (2021) The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale. Applied Surface Science, 561. 149961pp. doi:10.1016/j.apsusc.2021.149961
Schofield, Steven R., Curson, Neil J., Warschkow, Oliver, Marks, Nigel A., Wilson, Hugh F., Simmons, Michelle Y., Smith, Phillip V., Radny, Marian W., McKenzie, David R., Clark, Robert G. (2006) Phosphine Dissociation and Diffusion on Si(001) Observed at the Atomic Scale. The Journal of Physical Chemistry B, 110 (7). 3173-3179 doi:10.1021/jp054646v
Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C., Stock, Taylor J. Z., Curson, Neil J., Schofield, Steven R., Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin (2023) Resistless EUV lithography: Photon-induced oxide patterning on silicon. Science Advances, 9 (16) doi:10.1126/sciadv.adf5997
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Radny, M. W., Smith, P. V., Reusch, T. C. G., Warschkow, O., Marks, N. A., Wilson, H. F., Schofield, S. R., Curson, N. J., McKenzie, D. R., Simmons, M. Y. (2007) Single hydrogen atoms on the Si(001) surface. Physical Review B, 76 (15) doi:10.1103/physrevb.76.155302
Reusch, Thilo C. G., Radny, Marian W., Smith, Phillip V., Warschkow, Oliver, Marks, Nigel A., Curson, Neil J., McKenzie, David R., Simmons, Michelle Y. (2007) Single Phosphorus Atoms in Si(001):  Doping-Induced Charge Transfer into Isolated Si Dangling Bonds. The Journal of Physical Chemistry C, 111 (17). 6428-6433 doi:10.1021/jp068834c
Wilson, H. F., Warschkow, O., Marks, N. A., Schofield, S. R., Curson, N. J., Smith, P. V., Radny, M. W., McKenzie, D. R., Simmons, M. Y. (2004) Phosphine Dissociation on the Si(001) Surface. Physical Review Letters, 93 (22). doi:10.1103/physrevlett.93.226102
 
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