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Raghavachari, K., Fu, Q., Chen, G., Li, L., Li, C. H., Law, D. C., Hicks, R. F. (2002) Hydrogen Adsorption on the Indium-Rich Indium Phosphide (001) Surface:  A Novel Way to Produce Bridging In−H−In Bonds. Journal Of The American Chemical Society, 124 (50) 15119-15124 doi:10.1021/ja020348p

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen Adsorption on the Indium-Rich Indium Phosphide (001) Surface:  A Novel Way to Produce Bridging In−H−In Bonds
JournalJournal Of The American Chemical Society
AuthorsRaghavachari, K.Author
Fu, Q.Author
Chen, G.Author
Li, L.Author
Li, C. H.Author
Law, D. C.Author
Hicks, R. F.Author
Year2002 (December)Volume124
Issue50
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/ja020348pSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID1601872Long-form Identifiermindat:1:5:1601872:1
GUID0
Full ReferenceRaghavachari, K., Fu, Q., Chen, G., Li, L., Li, C. H., Law, D. C., Hicks, R. F. (2002) Hydrogen Adsorption on the Indium-Rich Indium Phosphide (001) Surface:  A Novel Way to Produce Bridging In−H−In Bonds. Journal Of The American Chemical Society, 124 (50) 15119-15124 doi:10.1021/ja020348p
Plain TextRaghavachari, K., Fu, Q., Chen, G., Li, L., Li, C. H., Law, D. C., Hicks, R. F. (2002) Hydrogen Adsorption on the Indium-Rich Indium Phosphide (001) Surface:  A Novel Way to Produce Bridging In−H−In Bonds. Journal Of The American Chemical Society, 124 (50) 15119-15124 doi:10.1021/ja020348p
In(2002, December) Journal Of The American Chemical Society Vol. 124 (50) American Chemical Society (ACS)

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Fu, Q., Negro, E., Chen, G., Law, D. C., Li, C. H., Hicks, R. F., Raghavachari, Krishnan (2002) Hydrogen adsorption on phosphorus-rich(2×1)indium phosphide (001) Physical Review B, 65 (7) doi:10.1103/physrevb.65.075318
Li, C. H., Li, L., Law, D. C., Visbeck, S. B., Hicks, R. F. (2002) Arsenic adsorption and exchange with phosphorus on indium phosphide (001) Physical Review B, 65 (20) doi:10.1103/physrevb.65.205322
Chen, G., Cheng, S. F., Tobin, D. J., Li, L., Raghavachari, K., Hicks, R. F. (2003) Indium phosphide (001)-(2×1): Direct evidence for a hydrogen-stabilized surface reconstruction. Physical Review B, 68 (12) doi:10.1103/physrevb.68.121303
Li, C. H., Sun, Y., Visbeck, S. B., Law, D. C., Hicks, R. F. (2002) Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001). Applied Physics Letters, 81 (21). 3939-3941 doi:10.1063/1.1523650
Chen, G., Visbeck, S. B., Law, D. C., Hicks, R. F. (2002) Structure-sensitive oxidation of the indium phosphide (001) surface. Journal of Applied Physics, 91 (11). 9362-9367 doi:10.1063/1.1471577
Law, D. C., Sun, Y., Li, C. H., Visbeck, S. B., Chen, G., Hicks, R. F. (2002) Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy. Physical Review B, 66 (4) doi:10.1103/physrevb.66.045314
Hicks, R. F., Qi, H., Fu, Q., Han, B.-K., Li, L. (1999) Hydrogen adsorption on GaAs (001) reconstructions. The Journal of Chemical Physics, 110 (21). 10498-10508 doi:10.1063/1.478980
Woo, R.L., Das, U., Cheng, S.F., Chen, G., Raghavachari, K., Hicks, R.F. (2006) Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface. Surface Science, 600 (21). 4888-4895 doi:10.1016/j.susc.2006.08.014
Begarney, M. J., Li, C. H., Law, D. C., Visbeck, S. B., Sun, Y., Hicks, R. F. (2001) Reflectance difference spectroscopy of mixed phases of indium phosphide (001). Applied Physics Letters, 78 (1). 55-57 doi:10.1063/1.1337620
Li, L., Han, B.-K., Law, D., Li, C. H., Fu, Q., Hicks, R. F. (1999) A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy. Applied Physics Letters, 75 (5). 683-685 doi:10.1063/1.124481
Law, D.C, Fu, Q, Visbeck, S.B, Sun, Y, Li, C.H, Hicks, R.F (2002) Hydrogen atoms as a probe of the optical anisotropy of indium phosphide (). Surface Science, 496 (1). 121-128 doi:10.1016/s0039-6028(01)01601-6
 
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