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Gottschalch, V., Srnanek, R., Wagner, G. (1982) Detection of lattice defects in InP and (InGa)As using selective photoetching. Journal of Materials Science Letters, 1 (8) 358-363 doi:10.1007/bf00726488

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Reference TypeJournal (article/letter/editorial)
TitleDetection of lattice defects in InP and (InGa)As using selective photoetching
JournalJournal of Materials Science Letters
AuthorsGottschalch, V.Author
Srnanek, R.Author
Wagner, G.Author
Year1982 (August)Volume1
Issue8
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00726488Search in ResearchGate
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Mindat Ref. ID16408411Long-form Identifiermindat:1:5:16408411:7
GUID0
Full ReferenceGottschalch, V., Srnanek, R., Wagner, G. (1982) Detection of lattice defects in InP and (InGa)As using selective photoetching. Journal of Materials Science Letters, 1 (8) 358-363 doi:10.1007/bf00726488
Plain TextGottschalch, V., Srnanek, R., Wagner, G. (1982) Detection of lattice defects in InP and (InGa)As using selective photoetching. Journal of Materials Science Letters, 1 (8) 358-363 doi:10.1007/bf00726488
In(1982, August) Journal of Materials Science Letters Vol. 1 (8) Springer Science and Business Media LLC

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Gottschalch, V., Herrnberger, H. (1990) Revealing of lattice defects on {001} GaAs surfaces by KI:I:H2SO4-etchant. Journal of Materials Science Letters, 9 (1) 7-10 doi:10.1007/bf00722852
Kirpal, G., Gerhardt, M., Benndorf, G., Schwabe, R., Pietag, F., Pietzonka, I., Lippold, G., Wagner, G., Franzheld, R., Gottschalch, V. (1997) MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources. Journal of Crystal Growth, 170 (1). 167-172 doi:10.1016/s0022-0248(96)00599-4
Bauer, J., Gottschalch, V., Paetzelt, H., Wagner, G. (2008) VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE. Journal of Crystal Growth, 310 (23). 5106-5110 doi:10.1016/j.jcrysgro.2008.07.059
Leibiger, G., Krahmer, C., Bauer, J., Herrnberger, H., Gottschalch, V. (2004) Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers. Journal of Crystal Growth, 272 (1). 732-738 doi:10.1016/j.jcrysgro.2004.08.088
Paetzelt, H., Gottschalch, V., Bauer, J., Benndorf, G., Wagner, G. (2008) Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templates. Journal of Crystal Growth, 310 (23). 5093-5097 doi:10.1016/j.jcrysgro.2008.06.065
Gottschalch, V., Leibiger, G., Benndorf, G., Herrnberger, H., Spemann, D. (2004) Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ≈1.17μm). Journal of Crystal Growth, 272 (1). 642-649 doi:10.1016/j.jcrysgro.2004.08.111
Kästner, G., Hilarius, V., Wagner, R., Bürger, W. (1989) Configuration of ferroelectric domains in semiconducting BaTiO3 ceramics. Journal of Materials Science Letters, 8 (8) 959-960 doi:10.1007/bf01729959
Wagner, G., Gottschalch, V., Rhan, H., Paufler, P. (1989) Pseudomorphic Growth and Nucleation of Misfit Dislocations in the Epitaxial System (001) InP/In1−xGraxAs. I. Pseudomorphic Growth, Tetragonal Distortion, and Lattice Relaxation by Dislocation Nucleation. physica status solidi (a), 112 (2). 519-531 doi:10.1002/pssa.2211120207
Littler, C. L., Seiler, D. G., Kaplan, R., Wagner, R. J. (1982) Magneto‐optical detection of deep acceptor impurities inp‐InSb. Applied Physics Letters, 41 (9). 880-882 doi:10.1063/1.93684
Fiedler, F., Schlachetzki, A., Klein, G. (1982) Material-selective etching of InP and an InGaAsP alloy. Journal of Materials Science, 17. 2911-2918 doi:10.1007/bf00644669
Weyher, J. L., Giling, L. J. (1985) Revealing of defects in InP by shallow (submicron) photoetching. Journal of Applied Physics, 58 (1). 219-222 doi:10.1063/1.335715
 
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